Magnetic-field-induced retardation of the recombination of nonequilibrium charge carriers in semiconductors

In work the conditions of regulation of increasing of carrier lifetime by recombination processes in semiconductors at low temperatures 1–10 K and classically «strong» magnetic fields 3 × 102 –3 × 104 Gs are analyzed. The values of carrier concentrations 1010 –1014) cm−3 correspond to conditions of manifestation as cascade as resonant capture. It is indicated on necessarily to take into account of scattering of electrons on acoustic phonons along with electron-electron collisions, by it cascade capture on coulomb centers. As showed (on the basis of concrete estimates) namely scattering on acoustic phonons at cascade capture, stabilities of lifetime and controls of dynamics it increase in the presence of «strong» magnetic field.

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Magnetic-field-induced retardation of the recombination of nonequilibrium charge carriers in semiconductors

Cited by 3 publications

References 2 publications

Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures

Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures

The Effect of Stabilizing the Lifetime of Charge Carriers in Semiconductors in a Magnetic Field

Effect stability of lifetime of charged carrier in semiconductors at a magnetic field

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