Magnetic field-stimulated change of photovoltage in solar silicon crystals

Abstract

Abstract. The effect of static magnetic field (B = 0.17 T) on composition of defects and lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this work was the character of changes in electrical characteristic of solar silicon. These changes are dependent on the time elapsed after the magnetic treatment. The results have been discussed in terms of spin-dependent processes in the subsystem of structural defects.

Effects of intensity of magnetic field generated by neodymium permanent magnet sheets on electrical characteristics of monocrystalline silicon solar cell

“…In this research, the direct application of external magnetic fields (perpendicular direction) to the most commonly used structure of monocrystalline silicon solar cell was examined and analyzed. The most effective B in theory [27] in the range of 0-260mT was used. The comprehensive v-i-p characteristic curves and therefore the critical parameters: Voc, Isc, Vmp, Imp, Pmax and FF could be determined based on both theoretical and experimental verifications.…”