Magnetic field-, strain-, and disorder-induced responses in an energy spectrum of graphene

Sahalianov, Ihor; Radchenko, Taras M.; Tatarenko, V. A.; Prylutskyy, Yu. І.

doi:10.1016/j.aop.2018.09.004

Cited by 31 publications

(16 citation statements)

References 67 publications

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“…Furthermore, the quantity √ ab is always less than one for positive deformations, (see Fig. 2(b)), causing the contraction of LLs spectra [49,91]. In constrast, for compressing graphene lattice the quantity √ ab increases and we can expand the LLs spectra.…”

Section: Dirac-weyl Equation Under Uniaxial Strainmentioning

confidence: 92%

Phase-space representation of Landau and electron coherent states for uniaxially strained graphene

Díaz-Bautista

Betancur-Ocampo

2020

Phys. Rev. B

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Recent experimental advances in the reconstruction of the Wigner function (WF) in electronic systems have led us to consider the possibility of employing this theoretical tool in the analysis of electron dynamics of uniaxially strained graphene. In this work, we study the effect of strain on the WF of electrons in graphene under the interaction of a uniform magnetic field. This mechanical deformation modifies drastically the shape of the Wigner and Husimi function of Landau and coherent states. The WF has a different behavior straining the material along the zigzag direction in comparison with the armchair one and favors the obtention of electron coherent states. The time evolution of the WF for electron coherent states shows fluctuations between classical and quantum behavior with a local maximum value moving in a closed path. The phase-space representation shows more clearly the effect of non-equidistant of relative Landau levels in the time evolution of electron coherent states than other approaches. Our findings may be useful in establishing protocols for the realization of electron coherent states in graphene as well as a bridge between condensed matter and quantum optics.

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Section: Dirac-weyl Equation Under Uniaxial Strainmentioning

confidence: 92%

Phase-space representation of Landau and electron coherent states for uniaxially strained graphene

Díaz-Bautista

Betancur-Ocampo

2020

Phys. Rev. B

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“…[394][395][396][397][398][399] Recently, Sahalianov and Radchenko investigated whether the bandgap in graphene can open via different types of lattice deformations. [400][401][402][403][404][405] As a result, it does not show any piezoelectric behavior; however, several experimental and theoretical studies have shown the modication or engineering of graphene to achieve a piezoelectric response. 406 Wang et al 407 reported the in-plain direct piezoelectric effect when in-plain biaxial strain is applied using the AFM tip on graphene membranes across the supported/suspended graphene boundary, and band bending occurs because of biaxial strain.…”

Section: One-and Two-dimensional Defects (Topological Defects)mentioning

confidence: 99%

“…394–399 Recently, Sahalianov and Radchenko investigated whether the bandgap in graphene can open via different types of lattice deformations. 400–405…”

Section: Defects In Graphenementioning

confidence: 99%

Various defects in graphene: a review

2022

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“…( 1) includes five distinct hoppings. As for to the strain-affected graphene 34,35,41 , we follow the strain-displacement relations 63 for a homogeneous elastic strain in phosphorene that can be obtained from a valence-force model 70 and assume an exponential dependence of the hopping parameters on the interatomic P-P distances l: 63 ( )…”

Section: Strain-caused Hopping Replacementmentioning

confidence: 99%

Straintronics in Phosphorene: Tensile vs Shear Strains and Their Combinations for Manipulating the Band Gap

Solomenko

Sahalianov

Radchenko

et al. 2023

Preprint

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We study the effects of the uniaxial tensile strain and shear deformation as well as their combinations on the electronic properties of single-layer black phosphorene. The evolutions of the strain-dependent band gap are obtained using the numerical calculations within the tight-binding (TB) model as well as the first-principles (DFT) simulations and compared with previous findings. The TB-model-based findings show that the band gap of the strain-free phosphorene agrees with the experimental value and linearly depends on both stretching and shearing: increases (decreases) as the stretching increases (decreases), whereas gradually decreases with increasing the shear. A linear dependence is less or more similar as compared to that obtained from the ab initio simulations for shear strain, however disagrees with a non-monotonic behaviour from the DFT-based calculations for tensile strain. Possible reasons for the discrepancy are discussed. In case of a combined deformation, when both strain types (tensile/compression + shear) are loaded simultaneously, their mutual influence extends the realizable band gap range: from zero up to the values respective to the wide-band-gap semiconductors. At a switched-on combined strain, the semiconductor–semimetal phase transition in the phosphorene is reachable at a weaker (strictly non-destructive) strain, which contributes to progress in fundamental and breakthroughs.

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Magnetic field-, strain-, and disorder-induced responses in an energy spectrum of graphene

Cited by 31 publications

References 67 publications

Phase-space representation of Landau and electron coherent states for uniaxially strained graphene

Phase-space representation of Landau and electron coherent states for uniaxially strained graphene

Various defects in graphene: a review

Straintronics in Phosphorene: Tensile vs Shear Strains and Their Combinations for Manipulating the Band Gap

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