2011
DOI: 10.1109/tasc.2010.2086043
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Magnetic Field Trapping in MgB$_{2}$ Bulks and Inserts

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Cited by 30 publications
(24 citation statements)
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“…However, both Viznichenko et al [6] and Mikhenko et al [14] have suggested that J c values of 7-9x10 9 A/m 2 and trapped fields of 4 T at 20 K and 7 T at 4.2 K are possible theoretically. Following on from earlier work by Giunchi et al [3,15], Perini [16] has reported more recently a trapped field of 1 T in a bulk MgB 2 sample fabricated by an Mg infiltration growth technique. Hsieh et al [17] further reported local J c values in zero field of up to 8x10 8 A/m 2 in samples fabricated by uniaxial hot pressing.…”
Section: Introductionmentioning
confidence: 87%
“…However, both Viznichenko et al [6] and Mikhenko et al [14] have suggested that J c values of 7-9x10 9 A/m 2 and trapped fields of 4 T at 20 K and 7 T at 4.2 K are possible theoretically. Following on from earlier work by Giunchi et al [3,15], Perini [16] has reported more recently a trapped field of 1 T in a bulk MgB 2 sample fabricated by an Mg infiltration growth technique. Hsieh et al [17] further reported local J c values in zero field of up to 8x10 8 A/m 2 in samples fabricated by uniaxial hot pressing.…”
Section: Introductionmentioning
confidence: 87%
“…Compared with REBa 2 Cu 3 O y (RE: Nd, Sm, Eu, Gd, NdEuGd) (REBCO) superconductors, the MgB 2 bulks do not require a long‐lasting oxygenation. With all these advantages, the MgB 2 disks can be used in a similar way as the melt‐textured YBa 2 Cu 3 O y /RE‐123 bulks, in energy production, energy storage, water purification, health care, and so on . Investigation of MgB 2 thin films showed critical current density by two orders of magnitude higher than that in polycrystalline MgB 2 bulks.…”
Section: Introductionmentioning
confidence: 99%
“…The production of large bulk MgB 2 materials is rather easy to achieve and to the recent day, the achievable size was improved to several centimeters [14e18]. Elena et al produced large bulk plates with a diameter of 70 mm by the reactive Mgliquid infiltration process and studied the magnetic field trapping behavior from 5.6 K to 20 K [14]. The typical trapped field measured 1 mm above the surface of the device was found to be 1.12 T at 12 K.…”
Section: Introductionmentioning
confidence: 99%