“…Asymmetric critical currents have also been observed in other works using conformally mapped nanoholes [13], size confinement in constrictions [2], and Josephson junctions [14,15]. It is plausible that asymmetric I-V characteristics can arise from extrinsic properties such as interface or edge roughness in lithographically defined constrictions [16] or other intrinsic mechanisms such as asymmetric vortex-flow energy barriers [1,17,18], magnetic flux penetration [19,20], flux pinning effects [21,22], vortex limited critical currents [23] and avalanches [24,25]. Hence, identifying the key driving mechanisms of the SDE and establishing their relations to other nonreciprocal transport effects is of paramount importance for future superconducting electronic as well as spintronic devices.…”