Magnetic force microscopy revealing long range molecule impact on magnetic tunnel junction based molecular spintronics devices

Tyagi, Pawan; Riso, Christopher

doi:10.1016/j.orgel.2019.105421

Cited by 20 publications

(21 citation statements)

References 29 publications

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“…In the prior work, defects within the tunnel barrier impacted the exchange coupling (akin to J i in this paper) between two FM electrodes of an MTJ 25 . (v) We were unable to find a simulation method that could simulate the role of defects for the case of molecule-induced strong exchange coupling as experimentally observed in our prior work 18 , 19 , 31 . By parametrically varying molecular coupling factors ( J mL and J mR Fig.…”

Section: Methodsmentioning

confidence: 90%

“…This paper elaborates experimental and theoretical data in the context of competing coupling via defects and molecules for MTJMSD. The experimental fabrication process for MTJMSD has been discussed elsewhere 8 , 14 , 15 , 19 , 27 . Prior work provides experimental details of patterning, depositing ferromagnetic electrodes, insulating barrier, and molecular attachment method 8 , 14 , 15 , 19 , 27 .…”

Section: Methodsmentioning

confidence: 99%

“…The experimental fabrication process for MTJMSD has been discussed elsewhere 8 , 14 , 15 , 19 , 27 . Prior work provides experimental details of patterning, depositing ferromagnetic electrodes, insulating barrier, and molecular attachment method 8 , 14 , 15 , 19 , 27 . The simulation study in this paper is based on the design of experimentally researched MTJMSDs (Fig.…”

Section: Methodsmentioning

confidence: 99%

“…1 b). In our experimental research, MTJMSD was formed by connecting organometallic molecular clusters (OMC) 28 between ferromagnets 15 , 19 . Every part of MTJMSD, i.e., molecules, FM, and electrodes, is represented by the Heisenberg model (Fig.…”

Section: Methodsmentioning

confidence: 99%

“…For example, NiFe ferromagnetic films behave entirely differently when deposited on Cobalt (Co). A slight change in multilayer structure produced dramatically different properties with a paramagnetic molecule 18 , 19 . Additionally, MTJMSD can employ a wide range of tunneling barriers because molecular channels dominate transport and magnetic properties, and insulating barriers serve merely as a physical spacer.…”

Section: Introductionmentioning

confidence: 99%

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Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices

Tyagi

Brown

Grizzle

et al. 2021

Sci Rep

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Nearly 70 years old dream of incorporating molecule as the device element is still challenged by competing defects in almost every experimentally tested molecular device approach. This paper focuses on the magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) method. An MTJMSD utilizes a tunnel barrier to ensure a robust and mass-producible physical gap between two ferromagnetic electrodes. MTJMSD approach may benefit from MTJ's industrial practices; however, the MTJMSD approach still needs to overcome additional challenges arising from the inclusion of magnetic molecules in conjunction with competing defects. Molecular device channels are covalently bonded between two ferromagnets across the insulating barrier. An insulating barrier may possess a variety of potential defects arising during the fabrication or operational phase. This paper describes an experimental and theoretical study of molecular coupling between ferromagnets in the presence of the competing coupling via an insulating tunnel barrier. We discuss the experimental observations of hillocks and pinhole-type defects producing inter-layer coupling that compete with molecular device elements. We performed theoretical simulations to encompass a wide range of competition between molecules and defects. Monte Carlo Simulation (MCS) was used for investigating the defect-induced inter-layer coupling on MTJMSD. Our research may help understand and design molecular spintronics devices utilizing various insulating spacers such as aluminum oxide (AlOx) and magnesium oxide (MgO) on a wide range of metal electrodes. This paper intends to provide practical insights for researchers intending to investigate the molecular device properties via the MTJMSD approach and do not have a background in magnetic tunnel junction fabrication.

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