2003
DOI: 10.1103/physrevb.68.024419
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Magnetic interactions in EuTe epitaxial layers and EuTe/PbTe superlattices

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Cited by 48 publications
(40 citation statements)
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“…However, our target was to compare the theory with experiments performed on EuTe thick layer samples ͑about 1 m thickness͒ grown by molecular-beam epitaxy ͑MBE͒, and therefore only a single T domain parallel to the ͑111͒ substrate was included in the calculations, because the other domains of equivalent energy present in isotropic samples are suppressed in MBE samples due to residual strains. 25 Within the existing T domain, all three S domains are found experimentally to be present in samples grown by MBE, 26 thus three S domains were included in the calculations.…”
Section: Resultsmentioning
confidence: 99%
“…However, our target was to compare the theory with experiments performed on EuTe thick layer samples ͑about 1 m thickness͒ grown by molecular-beam epitaxy ͑MBE͒, and therefore only a single T domain parallel to the ͑111͒ substrate was included in the calculations, because the other domains of equivalent energy present in isotropic samples are suppressed in MBE samples due to residual strains. 25 Within the existing T domain, all three S domains are found experimentally to be present in samples grown by MBE, 26 thus three S domains were included in the calculations.…”
Section: Resultsmentioning
confidence: 99%
“…The isotropic magnetic moments are effectively shielded by the 5s 2 and 5p 6 electronic shells, making the EuX's reference materials for Heisenberg magnetism. 1 Studied since the sixties, the EuX magnetic order is known to be ferromagnetic ͑FM͒ within individual ͑111͒, ͑111͒, ͑111͒, or ͑111͒ planes for each of the four distinct domains.…”
Section: +mentioning
confidence: 99%
“…It has been also proven that similar mechanism, however mediated by valence-band electrons, leads to long-range magnetic correlations also when there are no free carriers in the system [21]. The mediated by valence-band electrons IEC, i.e., superexchange-type interaction, has been shown to lead in all-semiconductor EuS-and EuTe-based superlattices to antiferromagnetic (AFM) correlations between successive magnetic layers [21][22][23], in agreement with the experimental observations. In this tight-binding approach the interlayer coupling is determined by the difference ∆E between the total energies of valence electrons calculated for two superlattice configurations: with spins in consecutive magnetic layers aligned parallel and antiparallel.…”
Section: Interlayer Coupling and The Tight-binding Modelmentioning
confidence: 99%