Magnetic, optical and transport properties of GaMnN films

Magnetic and magneto-transport properties of Ga1−xMnxN grown by MOCVD

“…3. According to our knowledge, there is no reports of MR effect in Ga 1Àx Mn x N films grown by MOCVD, though similar phenomena has been found in Mn-doped GaN films by MBE [14,15] and nanowires by CVD [16]. The observed negative MR in our films may be caused by the interaction of electron carriers with the localized Mn moments.…”

Antiferromagnetic Coupling Driven by Bond Length Contraction near theGa1−xMnxNWang1, Sun2, Jena3 2004Phys. Rev. Lett.596240View full textAdd to dashboardCite

“…To this end the dilute magnetic semiconductors (DMS) are considered to be an important class of materials. Following the discovery of ferromagnetism in Ga; MnAs [1] and the subsequent theoretical prediction [2] that Mn doped GaN could be ferromagnetic at or above room temperature, numerous attempts have been made to synthesize this promising DMS material [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. However, the results have been rather confusing.…”

Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

“…Additionally, a satellite peak at 3.35 eV and 3.33 eV have been observed for both the films, and which is presumably assigned to a band-to-band like transition in Mn doped GaN due to the formation of p-d hybridized states, which is important for carrier induced ferromagnetism. According to the earlier investigators, the near band edge was observed at 3.41 eV at low temperature, and those films also exhibited a broad peak at 2.4 eV and which could be originated by the grease applied during the measurements [21,22]. The emission at 590 nm was reported and assigned to the Mn 2+ ( 4 T 1 !…”