2003
DOI: 10.1103/physrevb.68.184404
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Magnetic origin of enhanced top exchange biasing in Py/IrMn/Py multilayers

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Cited by 36 publications
(28 citation statements)
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“…[3][4][5][6][7] Nowadays, FM/AFM bilayers are incorporated in magnetic thin film devices such as magnetic spin-valve sensors, magnetic tunnel junction read heads for hard-disk drives, and magnetic random access memories. For continuous FM/AFM bilayers, variations of the exchange bias field with AFM grain size, 5 AFM domain size, 8 and AFM film thickness [9][10][11] have been measured, illustrating the theoretically predicted importance of the AFM domain size.…”
mentioning
confidence: 64%
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“…[3][4][5][6][7] Nowadays, FM/AFM bilayers are incorporated in magnetic thin film devices such as magnetic spin-valve sensors, magnetic tunnel junction read heads for hard-disk drives, and magnetic random access memories. For continuous FM/AFM bilayers, variations of the exchange bias field with AFM grain size, 5 AFM domain size, 8 and AFM film thickness [9][10][11] have been measured, illustrating the theoretically predicted importance of the AFM domain size.…”
mentioning
confidence: 64%
“…The interface coupling energy per unit area can now be written as int =−J int 2 / ͑aJ AFM 2 t AFM ͒, which corroborates the inverse proportionality between the measured exchange bias field and the AFM layer thickness in our experiments and other exchange bias systems. [9][10][11] The absence of the 1 / t variation of the exchange bias field for ͓Pt͑2 nm͒ /Co͑5 nm͔͒ 3 / IrMn͑t͒ multilayers on the nanospheres with t Ն 10 nm indicates that the AFM domains are confined by the size of the particles. In this case, the AFM film is single domain and the AFM domain size scales with the diameter of the spheres instead of the IrMn film thickness.…”
mentioning
confidence: 99%
“…On the contrary, the domain state model [9] considers the entire volume of the AF in order to account for EB, suggesting that the internal magnetic structure of the AF is crucial for the emergence of EB. Several techniques have been applied to study AF domains [10][11][12], and 90 or 180 domain walls were claimed for different systems [13][14][15][16][17][18][19][20]. Although recent experiments [21,22] suggest that the bulk AF sets the EB, whether EB is purely controlled by the interface or AF bulk is still controversial.…”
mentioning
confidence: 99%
“…[1][2][3] The reasons for this discrepancy and, more generally, the origin of the exchange bias effect have been studied in detail. While many groups found a strong correlation between H ex and the degree of crystalline texture, [1][2][3][4][5] others did not find any and they attributed their exchange bias results to the influence of grain size, 2,[6][7][8] interface roughness, 2,9 or magnetic effects 10,11 instead. The magnetic-field annealing experiments in most of these studies focused primarily on the optimization of the annealing time and temperature.…”
Section: Introductionmentioning
confidence: 99%