Using the mean-field approximation based on the Gibbs-Bogoliubov inequality for the free energy, we conducted an investigation into the magnetic properties and hysteresis behavior of a graphene Ising bilayer, where the top and bottom layers are occupied by spins σ = 3/2 and S = 5/2, respectively. The effects of exchange interactions, crystal fields, external magnetic field and temperature on the
total magnetization, partial magnetizations of each layer, total magnetic susceptibility, blocking temperature and hysteresis loops of the system were thoroughly analyzed. The variations of the blocking temperature as a function of various parameters in the system's Hamiltonian were presented. Furthermore, we demonstrated the existence of multiple hysteresis loop behaviors under specific
physical conditions.