Magnetic properties and microstructure of FePt/MoC/CrRu films

Tsai, Jai-Lin; Luo, Qi-Shao; Chen, Po-Ran; Tseng, Yi‐Ping

doi:10.1016/j.jmmm.2015.01.085

Cited by 9 publications

(3 citation statements)

References 15 publications

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“…One popular developed method of tuning H C is to modulate the crystalline structure (i.e., ordering degree) of L1 0 -FePt through doping (Cu, Au, Sb), − adding buffer (Ag, CrRu) , or capping layers (Ag, FeOx), , and using ion or laser irradiation. , These approaches are difficult to realize continuous tuning once the film structure is set. Another approach in achieving H C tunability is to change the electronic structure of L1 0 -FePt film by the electrically controlled surface charge effect. − Alternatively, the strain-mediated magnetoelectric coupling effect in ferromagnetic/ferroelectric heterostructure has been recently explored to manipulate the electronic structure and related magnetic − or magneto-transport properties − in magnetic films.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, in the view of device application, it is very desirable to realize continuous and nonvolatile tunability of magnetization switching characteristics especially coercivity field (H C ) in L1 0 -FePt films. One popular developed method of tuning H C is to modulate the crystalline structure (i.e., ordering degree) of L1 0 -FePt through doping (Cu, Au, Sb), 6−8 adding buffer (Ag, CrRu) 9,10 or capping layers (Ag, FeOx), 11,12 and using ion or laser irradiation. 13,14 These approaches are difficult to realize continuous tuning once the film structure is set.…”

Section: Introductionmentioning

confidence: 99%

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Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering

Feng

Zhao

Yang

et al. 2016

ACS Appl. Mater. Interfaces

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Reversible and nonvolatile modulation of magnetization switching characteristic in ferromagnetic materials is crucial in developing spintronic devices with low power consumption. It is recently discovered that strain engineering can be an active and effective approach in tuning the magnetic/transport properties of thin films. The primary method in strain modulation is via the converse piezoelectric effect of ferroelectrics, which is usually volatile due to the reliance of the required electric field. Also the maximum amount of deformation in ferroelectrics is usually limited to be less than 1%, and the corresponding magnetoelastic strain energy introduced to ferromagnetic films is on the order of 10(4) J/m(3), not enough to overcome magnetocrystalline anisotropy energy (Ku) in many materials. Different from using conventional strain inducing substrates, this paper reports on the significantly large, reversible, and nonvolatile lattice strain in the L10-FePt films (up to 2.18%) using nonelectrically controlled shape memory alloy substrates. Introduced lattice strain can be large enough to effectively affect domain structure and magnetic reversal in FePt. A noticeable decrease of coercivity field by 80% is observed. Moreover, the coercivity field tunability using such substrates is nonvolatile at room temperature and is also reversible due to the characteristics of the shape memory effect. This finding provides an efficient avenue for developing strain assisted spintronic devices such as logic memory device, magnetoresistive random-access memory, and memristor.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering

Feng

Zhao

Yang

et al. 2016

ACS Appl. Mater. Interfaces

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“…The FePt film with high chemical ordering, strong perpendicular magnetic anisotropy, high (001) texture, and columnar grain structure was all required and still face many challenges for commercial application. To achieve (001) texture, the FePt film was epitaxially deposited on an appropriated intermediate layer, for example, an MgO layer deposited by radio frequency sputtering and MgTiO, TiN, TiC, and MoC films prepared on a Cr(Ru) seed layer by direct current (dc) sputtering [5]- [9]. The FePt film shows varied perpendicular magnetic anisotropy and in-plane coercivity with different intermediate layers.…”

Section: Introductionmentioning

confidence: 99%

Carbon Capping Layer Effect on Magnetic Properties and Microstructure of FePt/MoC/CrRu Films

Tsai

Tseng

et al. 2015

IEEE Trans. Magn.

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A capping C layer with various thicknesses was sputtered on FePt/MoC/CrRu/glass and postannealed from 190°C to 365°C. The optimal magnetic property was obtained at 2 nm-thick C layer annealed at 268°C and used to discuss an FePt thickness effect. The FePt films with a thickness of 4-10 nm were deposited on MoC/CrRu at 425°C using magnetron sputtering. The MoC intermediate layer was epitaxially grown on the (200) textured CrRu seed layer, and the FePt film was prepared on the (200) textured MoC at 425°C. The FePt film shows strong (001) texture, and the out-of-plane coercivity of 7.5 kOe has been demonstrated in 10 nm-thick FePt film. After capping a 2 nm-thick C layer and postannealed at 268°C, the out-of-plane coercivity was increased to 10 kOe compared with FePt without C capping. From microstructure, the FePt grains were distributed in-or between-islandlike structure and further separated by excess carbon from a capping carbon layer and an MoC intermediate layer.

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FePt Thin Films: Fundamentals and Applications

Hsiao

2016

Reference Module in Materials Science and Materials Engineering

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Magnetic properties and microstructure of FePt/MoC/CrRu films

Cited by 9 publications

References 15 publications

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering

Carbon Capping Layer Effect on Magnetic Properties and Microstructure of FePt/MoC/CrRu Films

FePt Thin Films: Fundamentals and Applications

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Magnetic properties and microstructure of FePt/MoC/CrRu films

Cited by 9 publications

References 15 publications

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L10-FePt Films via Nonelectrically Controlled Strain Engineering

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L10-FePt Films via Nonelectrically Controlled Strain Engineering

Carbon Capping Layer Effect on Magnetic Properties and Microstructure of FePt/MoC/CrRu Films

FePt Thin Films: Fundamentals and Applications

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Product

Resources

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Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering