2009
DOI: 10.1134/s1063785009060145
|View full text |Cite
|
Sign up to set email alerts
|

Magnetic properties of cobalt films at the initial stage of ion-beam deposition

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0
2

Year Published

2012
2012
2024
2024

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 7 publications
(4 citation statements)
references
References 6 publications
0
2
0
2
Order By: Relevance
“…To explain the formation of a high-quality continuous metal film on the substrate’s surface, the flux of the sputtered metal atoms can be conditionally divided into two parts: main and high-energy [ 24 , 25 ]. The main part consists of the atoms with an average energy that is approximately equal to the sublimation energy U (for beryllium and gold ≈ 3–4 eV/atom) and the high-energy part includes the atoms with an energy of more than 40 eV, i.e., an order of magnitude higher than U [ 46 , 48 ]. The integration of the energy spectrum of the sputtered atoms (7) over energy up to the highest energy E max gives an estimate of the relative number of the sputtered atoms with energies up to 40 eV of a little more than 70% ( Figure 8 a,e).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…To explain the formation of a high-quality continuous metal film on the substrate’s surface, the flux of the sputtered metal atoms can be conditionally divided into two parts: main and high-energy [ 24 , 25 ]. The main part consists of the atoms with an average energy that is approximately equal to the sublimation energy U (for beryllium and gold ≈ 3–4 eV/atom) and the high-energy part includes the atoms with an energy of more than 40 eV, i.e., an order of magnitude higher than U [ 46 , 48 ]. The integration of the energy spectrum of the sputtered atoms (7) over energy up to the highest energy E max gives an estimate of the relative number of the sputtered atoms with energies up to 40 eV of a little more than 70% ( Figure 8 a,e).…”
Section: Resultsmentioning
confidence: 99%
“…High energy atoms pass through the remaining part of the layer after sputtering at the substrate–film interface and reach the near-surface layer of the substrate, forming point defects there in addition to the existing point defects that were introduced during the previous deposition. They lead to improved adhesion [ 24 , 25 , 48 ] due to the formation of additional physical bonds between the implanted and deposited metal atoms. This ensures the formation on the substrate of a continuous metal layer with a thickness of several atomic layers and the subsequent nanosized film deposition of the same metal on its surface.…”
Section: Resultsmentioning
confidence: 99%
“…Кроме того, при напылении обеспечивается высокая адгезия наносимых пленок к подложке, их однородность по толщине и постоянство химического состава. С другой стороны, малые скорости напыления материалов позволяют контролировать процесс их нанесения и проводить исследования как на начальных стадиях зарождения, так и при образовании сплошной пленки [3,[14][15][16][17].…”
unclassified
“…Внедренные атомы золота являются, с одной стороны, точечными дефектами в приповерхностном нарушенном слое подложки, а с другой стороны, служат дополнительными центрами кластерообразования. Они приводят к улучшению адгезии [14,16,17] из-за формирования дополнительных физических связей внедренный атом золота -осажденный адатом золота. При этом для предотвращения гранулирования пленок золота толщиной менее 2 нм производится удаление поверхностного слоя золота распылением ионами кислорода с энергией менее 300 эВ без удаления поверхности подложки, что позволяет сохранить внедренные в подложку атомы золота.…”
unclassified