Magnetic properties of DyAs and DyP (001) films

Abstract

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Magnetization-controlled spin transport in DyAs/GaAs layers

“…The possibility for multiple configurations in the antiferromagnetic phase is consistent with the results from temperaturedependent magnetization experiment, where two inflections showed up in the magnetization curves of DyAs at temperatures around 6 and 8 K, respectively. 7 The sharp peak and the associated R xx change influenced by a small magnetic field ϳ 0.2 T is, to some extent, similar to giant magnetoresistance observed in the metal superlattices and granular materials. 8 In contrast with the largely isotropic magnetization properties of DyAs reported in Ref.…”

“…The estimated value T N ϳ8 K is consistent with the magnetization result. 7 The temperature dependence of the magnetoresistance ͑HϾ0͒ appears to be also consistent with a transition at T N ϳ8 K. The R xx traces have been recorded at different temperatures; several typical curves are shown in Fig. 3 for the field placed perpendicular to the plane and swept from negative to positive side.…”

“…The Neel temperature deduced from the temperature dependence of resistance is about 8 K; this value is consistent with the magnetization results. 7 We observed two distinct peaks in the magnetoresistances which are attributed to the strong spin-disorder scattering at the magnetic phase boundaries. Our data suggests that there exist more than one type of antiferromagnetism configuration in DyAs, which is qualitatively different from ErAs in which only one magnetoresistance peak has been observed.…”

“…8 In contrast with the largely isotropic magnetization properties of DyAs reported in Ref. 7 properties are essentially anisotropic: R xx is very sensitive to the magnetic field-current flow configurations, i.e., the peak amplitudes and their positions ͑especially for the peak around 2.5 T͒ vary with the field orientation. Furthermore, while it is absent in other field orientations, an additional peak in the R xx emerges at a higher magnetic field of 9.5 T for the in-plane magnetic field oriented about 35°with respect to the current flow.…”

“…With the development of molecular beam epitaxy (MBE) techniques, rare-earth monoarsenides (RE-As) can now be grown on GaAs substrate with high quality [1,2]. Such magnetic semimetals host a number of interesting electronic and magnetic phases [3][4][5][6][7] mostly derived from the rare-earth elements. Integration of magnetic semimetal with semiconductor, e.g.…”