Perpendicular magnetic anisotropy (PMA) in transition metal thin films offers a pathway for enabling the interesting physics of nanomagnetism and developing a wide range of spintronics applications. We demonstrate a simple method to obtain Ni thin films with PMA by depositing them onto nanoporous anodic alumina membranes (NPAAMs), with different pore diameters varying in the range between 32 ± 2 and 93 ± 1 nm. Thus, several sets of Ni antidot arrays thin films have been fabricated with different hole diameters, 35 nm ≤ d ≤ 89 nm, and fixed interhole distances, D int , around 103 ± 2 nm but reducing the edge-to-edge separation between adjacent antidots, (W = D int − d), and in two different situations, by considering that W is well above or below the layer thickness, t, of the thin film. The crossover from the in-plane magnetization to out of plane magnetization in a ferromagnetic thin film has been achieved by modifying only the nanopore size of the patterned anodic alumina template and the experimental results were supported by micromagnetic simulations performed with Mumax 3 code. A dramatic change in the coercivity, H C , dependence with d and W parameters has been observed with a critical nanohole diameter, d c , at which the appearance of the perpendicular magnetization is observed. The decreasing of the inplane coercivity for samples with d > 75 nm is due to the weakened of the in-plane magnetic anisotropy and the rising of the out of plane component. The effective perpendicular magnetic anisotropy energy density for Ni antidot thin film with d = 90 nm and t = 20 nm is around 1.44 erg/cm 2 , larger than that obtained by traditional approaches for Ni films with PMA (0.03−0.2 erg/cm 2 ). These findings point toward antidot thin films as novel routes to engineer the magnetic behavior of ferromagnetic metal with large PMA, which might entail a milestone for future applications in bit patterned magneto-optic perpendicular recording media and spintronic devices.