Magnetic properties of Ho1−x Lu x B12 solid solutions

Gabáni, S.; Gažo, E.; Pristáš, G.; Takáčová, I.; Flachbart, К.; Shitsevalova, N. Yu.; Siemensmeyer, K.; Sluchanko, N. E.

doi:10.3938/jkps.62.1514

Cited by 2 publications

(6 citation statements)

References 13 publications

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“…2(a)]. This matches the shift of Néel temperature observed in heat capacity data [42] and the magnetic susceptibility results of this compound [43]. magnetic fields H < 8 kOe [ Fig.…”

Section: Methodssupporting

confidence: 87%

“…The found Neel temperature T N ≈3.45 K (Fig. 2) coincides with a good accuracy with results received in [42,43]. As can be seen from Fig.…”

Section: Iiia Resistivity Of Hosupporting

confidence: 89%

“…In previous magnetoresistance measurements of the non-magnetic reference compound LuB 12 and of the antiferromagnetic (AF) HoB 12 in AF and paramagnetic (P) states a large negative MR effect (of about 30% in magnetic field H∼80 kOe) was observed in HoB 12 in the vicinity of AF-P phase transition [41]. Taking into account that holmium to lutetium substitution in Ho x Lu 1−x B 12 system is accompanied with Neel temperature lowering from T N ≈7.4 K for x=1 to T N ≈1.9 K for x=0.3 [42,43] and that at least for x≤0.1 a paramagnetic ground state is detected in these dodecaborides, it becomes possible to investigate the emergence of the negative MR effect in absence of AF long range order in diluted magnetic compounds with small nanosize magnetic clusters of Ho-ions embedded in the boron matrix (Fig. 1e).…”

Section: Introductionmentioning

confidence: 95%

“…Taking into account that holmium to lutetium substitution in the Ho x Lu 1−x B 12 system is accompanied with Néel temperature lowering from T N ≈ 7.4 K for x = 1 to T N ≈ 1.9 K for x = 0.3 [42,43] and that at least for x 0.1 a paramagnetic ground state is detected in these dodecaborides, it becomes possible to investigate the emergence of the negative MR effect in absence of AF long-range order in diluted magnetic compounds with small nanosize magnetic clusters of Ho ions embedded in the boron matrix [ Fig. 1(e)].…”

Section: Introductionmentioning

confidence: 99%

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Charge transport inHoxLu1−xB12: Separating positive and negative magnetoresistance in metals with magnetic ions

Sluchanko

Khoroshilov²,

Anisimov³

et al. 2015

Phys. Rev. B

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The magnetoresistance (MR) ρ/ρ of the cage-glass compound Ho x Lu 1−x B 12 with various concentrations of magnetic holmium ions (x 0.5) has been studied in detail concurrently with magnetization M(T ) and Hall effect investigations on high-quality single crystals at temperatures 1.9-120 K and in magnetic field up to 80 kOe. The undertaken analysis of ρ/ρ allows us to conclude that the large negative magnetoresistance (nMR) observed in the vicinity of the Néel temperature is caused by scattering of charge carriers on magnetic clusters of Ho 3+ ions, and that these nanosize regions with antiferromagnetic (AF) exchange inside may be considered as short-range-order AF domains. It was shown that the Yosida relation − ρ/ρ ∼ M 2 provides an adequate description of the nMR effect for the case of Langevin-type behavior of magnetization. Moreover, a reduction of Ho-ion effective magnetic moments in the range 3-9 μ B was found to develop both with temperature lowering and under the increase of holmium content. A phenomenological description of the large positive quadratic contribution ρ/ρ ∼ μ 2 D H 2 which dominates in Ho x Lu 1−x B 12 in the intermediate temperature range 20-120 K allows us to estimate the drift mobility exponential changes μ D ∼ T −α with α = 1.3-1.6 depending on Ho concentration. An even more comprehensive behavior of magnetoresistance has been found in the AF state of Ho x Lu 1−x B 12 where an additional linear positive component was observed and attributed to charge-carrier scattering on the spin density wave (SDW). High-precision measurements of ρ/ρ = f (H,T ) have allowed us also to reconstruct the magnetic H-T phase diagram of Ho 0.5 Lu 0.5 B 12 and to resolve its magnetic structure as a superposition of 4f (based on localized moments) and 5d (based on SDW) components.

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“…2(a)]. This matches the shift of Néel temperature observed in heat capacity data [42] and the magnetic susceptibility results of this compound [43]. magnetic fields H < 8 kOe [ Fig.…”

Section: Methodssupporting

confidence: 87%

“…The found Neel temperature T N ≈3.45 K (Fig. 2) coincides with a good accuracy with results received in [42,43]. As can be seen from Fig.…”

Section: Iiia Resistivity Of Hosupporting

confidence: 89%

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Charge transport inHoxLu1−xB12: Separating positive and negative magnetoresistance in metals with magnetic ions

Sluchanko

Khoroshilov²,

Anisimov³

et al. 2015

Phys. Rev. B

Self Cite

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“…In line with earlier measurements [7,13,46] it exhibits Curie-Weiss-like and van Vleck contributions (due to its intermediate valence) for T 100 K, and non-magnetic behaviour with an enlarged DOS at E F at lowest temperatures. The upturn at lowest temperatures which is typically assigned to paramagnetic impurities [7,46,47] is comparatively tiny for this SmB 6 sample indicating excellent sample quality. Nonetheless, one might speculate that the small difference in χ between zero-field and field cooled measurement may be due to this tiny amount of impurities.…”

Section: Kondo Effectsupporting

confidence: 91%

Surface and electronic structure of SmB through scanning tunneling microscopy

Rößler

Jiao

Kim

et al. 2016

Philosophical Magazine

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(2016) Surface and electronic structure of SmB through scanning tunneling microscopy, Philosophical Magazine, 96:31, 3262-3273, DOI: 10.1080/14786435.2016 ABSTRACTSmB 6 , a so-called Kondo insulator, is recently discussed as a candidate material for a strong topological insulator. We present detailed atomically resolved topographic information on the (0 0 1) surface from more than a dozen SmB 6 samples. Atomically flat, in situ cleaved surfaces often exhibit B-and Sm-terminated surfaces as well as reconstructed and non-reconstructed areas coexisting on different length scales. The terminations are unambiguously identified. In addition, electronic inhomogeneities are observed which likely result from the polar nature of the (0 0 1) surface and may indicate an inhomogeneous Sm valence at the surface of SmB 6 . In addition, atomically resolved topographies on a (1 1 0) surface are discussed. ARTICLE HISTORY

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Magnetic properties of Ho1−x Lu x B12 solid solutions

Cited by 2 publications

References 13 publications

Charge transport inHoxLu1−xB12: Separating positive and negative magnetoresistance in metals with magnetic ions

Charge transport inHoxLu1−xB12: Separating positive and negative magnetoresistance in metals with magnetic ions

Surface and electronic structure of SmB through scanning tunneling microscopy

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