Magnetic Properties of Sn_{1-x}Cr_xTe Diluted Magnetic Semiconductors

Kilański, Ł.; Podgórni, A.; Górska, M.; Dobrowolski, W.; Слынько, В. И.; Slynko, E.I.; Reszka, A.; Kowalski, B.

doi:10.12693/aphyspola.124.881

Cited by 13 publications

(13 citation statements)

References 16 publications

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“…Especially, the formation energy of Sc Sn is negative, indicating that Sc doping may bring the instability of SnTe. The formation energy of Mn is lowest among the middle TM atoms (V-Ni), which is consistent with the experimental result that the solubility of Mn in SnTe is largest and it is quite limited for other middle TMs 21,[25][26][27][40][41][42] . We also calculate the cohesive energy of the bulk phase of TM element (E c ) as shown in Fig.…”

Section: Resultssupporting

confidence: 89%

“…This is completely different from the case of TM doping in Bi 2 Te 3 -class TIs -V and Cr substitutions have low formation energy ensuring the possibility of spontaneous doping 36 . Instead, high-level doping of TM in SnTe will bring in TM elemental clustering in SnTe, as experimentally observed 21,41,42 . The discrepancy for TM doping in SnTe and Bi 2 Te 3 may originate from the distinction of their crystal structure: the strain introduced by the TM doping cannot be released in the rock-salt structure of SnTe 2,33 but can easily be released in the van der Waals layered structure of Bi 2 Te 3 45,46 .…”

Section: Resultsmentioning

confidence: 88%

“…Especially, when an out-of-plane ferromagnetic order is introduced into a TCI film, the QAHE with a tunable large Chern number can be produced 15,16 , distinguished from the case of ± 1/± 2 Chern-number QAHE in topological insulator (TI) films [17][18][19] . This has motivated many efforts to introduce magnetism in TCIs by magnetic doping or proximity effects with magnetic substrates [20][21][22] .…”

Section: Topological Crystalline Insulator (Tci)mentioning

confidence: 99%

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Defect energetics and magnetic properties of 3d-transition-metal-doped topological crystalline insulator SnTe

Wang

Chen

et al. 2016

Sci. China Phys. Mech. Astron.

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The introduction of magnetism in SnTe-class topological crystalline insulators is a challenging subject with great importance in the quantum device applications. Based on the first-principles calculations, we have studied the defect energetics and magnetic properties of 3d transition-metal (TM)-doped SnTe. We find that the doped TM atoms prefer to stay in the neutral states and have comparatively high formation energies, suggesting that the uniform TM doping in SnTe with a higher concentration will be difficult unless clustering. In the dilute doping regime, all the magnetic TM atoms are in the high-spin states, indicating that the spin splitting energy of 3d TM is stronger than the crystal splitting energy of the SnTe ligand. Importantly, Mn-doped SnTe has relatively low defect formation energy, largest local magnetic moment, and no defect levels in the bulk gap, suggesting that Mn is a promising magnetic dopant to realize the magnetic order for the theoretically-proposed large-Chern-number quantum anomalous Hall effect (QAHE) in SnTe.

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Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 88%

Section: Topological Crystalline Insulator (Tci)mentioning

confidence: 99%

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Defect energetics and magnetic properties of 3d-transition-metal-doped topological crystalline insulator SnTe

Wang

Chen

et al. 2016

Sci. China Phys. Mech. Astron.

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“…Eggenkamp et al investigated magnetic properties of Sn 1−x Mn x Te and showed ferromagnetism with critical temperatures changing from 3 K up to 16 K for Mn-content, x, changing from 0.03 to 0.1, respectively [6]. Chromium alloying of SnTe caused a presence of clusters with a high content of chromium, around x = 0.25, and the bulk matrix with randomly distributed Cr ions having the concentration equal to about 20% of the average composition x [7]. In the present paper we investigate the problem of alloying the SnTe PbTe solid solutions with Cr ions.…”

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confidence: 99%

Magnetic Order and Magnetic Inhomogeneities in SnCrTe-PbCrTe Solid Solutions

et al. 2014

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We present the studies of structural, electrical and magnetic properties of bulk Sn1−x−y PbxCry Te mixed crystals with chemical composition 0.18 ≤ x ≤ 0.35 and 0.007 ≤ y ≤ 0.071. The magnetometric studies indicate that for the high Cr-content, y = 0.071, the alloy shows ferromagnetic alignment with the Curie temperature, TC, around 265 K. The Cr5Te8 clusters are responsible for the ferromagnetic order. At low Cr content, y ≈ 0.01, a peak in the ac magnetic susceptibility identied as the cluster-glass-like transition is observed at a temperature about 130 K. The cluster-glass-like transition is likely due to the presence of Cr2Te3 clusters in the samples with y ≈ 0.01. The transport characterization of the samples indicated strong metallic p-type conductivity with relatively high carrier concentration, n > 10 20 cm −3 , and carrier mobility, µ > 150 cm 2 /(V s).

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“…. Development of GeTe based ferromagnetic composite materials 14,15 creates possibilities to improve magnetic properties of the material and introduce new a) Electronic mail: kilan@ifpan.edu.pl and interesting magnetotransport effects resulting from the presence of metallic grains inside the semiconductor matrix.…”

Section: Introductionmentioning

confidence: 99%

Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te

Kilanski,

Górska,

Szymczak

et al. 2014

Preprint

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Magnetic and transport properties of Ge 1-x-y Mn x Eu y Te crystals with chemical compositions 0.041 ≤ x ≤ 0.092 and 0.010 ≤ y ≤ 0.043 are studied. Ferromagnetic order is observed at 150 < T < 160 K. Aggregation of magnetic ions into clusters is found to be the source of almost constant, composition independent Curie temperatures in our samples. Magnetotransport studies show the presence of both negative (at T < 25 K) and linear positive (for 25 < T < 200 K) magnetoresistance effects (with amplitudes not exceeding 2%) in the studied alloy. Negative magnetoresistance detected at T < 25 K is found to be due to a tunneling of spin-polarized electrons between ferromagnetic clusters. A linear positive magnetoresistance is identified to be geometrical effect related with the presence of ferromagnetic clusters inside semiconductor matrix. The product of the polarization constant and the inter-grain exchange constant, JP , varies between about 0.13 meV and 0.99 meV. Strong anomalous Hall effect (AHE) is observed for T ≤ T C with coefficients R S independent of temperature. The scaling analysis of the AHE leads to a conclusion that this effect is due to a skew scattering mechanism.

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Magnetic Properties of Sn_{1-x}Cr_xTe Diluted Magnetic Semiconductors

Cited by 13 publications

References 16 publications

Defect energetics and magnetic properties of 3d-transition-metal-doped topological crystalline insulator SnTe

Defect energetics and magnetic properties of 3d-transition-metal-doped topological crystalline insulator SnTe

Magnetic Order and Magnetic Inhomogeneities in SnCrTe-PbCrTe Solid Solutions

Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te

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