2018
DOI: 10.1088/1361-6463/aad41b
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Magnetic properties, spin waves and interaction between spin excitations and 2D electrons in interface layer in Y3Fe5O12/AlO x /GaAs-heterostructures

Abstract: We describe synthesis of submicron Y3Fe5O12 (YIG) films sputtered on GaAs-based substrates and present results of the investigation of ferromagnetic resonance (FMR), spin wave propagation and interaction between spin excitations and 2D electrons in interface layer in YIG / AlOx / GaAsheterostructures. It is found that the contribution of the relaxation process to the FMR linewidth is about 2 % of the linewidth ∆H. At the same time, for all samples FMR linewidths are high. Sputtered YIG films have magnetic inho… Show more

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Cited by 14 publications
(9 citation statements)
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“…This is important for microwave applications. Synthesis of nanometer YIG films of high quality on semiconductor substrates (Si, GaN and GaAs) produced by the two-stage ion-beam sputtering [26][27][28] gives us the possibility to grow high-quality YIG films on semiconductor substrates by the LMBE technique. How do we reduce the relaxation in spin-wave devices produced on nanosized YIG film / semiconductor structures and grow YIG films with desirable effective magnetization profile?…”
Section: Some Considerations On Growth Of Yig / Semiconductor Heteros...mentioning
confidence: 99%
See 2 more Smart Citations
“…This is important for microwave applications. Synthesis of nanometer YIG films of high quality on semiconductor substrates (Si, GaN and GaAs) produced by the two-stage ion-beam sputtering [26][27][28] gives us the possibility to grow high-quality YIG films on semiconductor substrates by the LMBE technique. How do we reduce the relaxation in spin-wave devices produced on nanosized YIG film / semiconductor structures and grow YIG films with desirable effective magnetization profile?…”
Section: Some Considerations On Growth Of Yig / Semiconductor Heteros...mentioning
confidence: 99%
“…(3) In accordance with [26][27][28], the third layer is a buffer YIG layer with a thickness of 2-3 In order to smooth surface of this layer, it is desirable to grow it at a high growth temperature. The purpose of this buffer YIG layer is to prevent diffusion of fast-relaxing ions Gd 3 + and Nd 3 + in the main YIG layer from GGG and NdGG layers, respectively.…”
Section: Some Considerations On Growth Of Yig / Semiconductor Heteros...mentioning
confidence: 99%
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“…(GGG). However, these substrates have recently become semiconductor materials: Si, GaAs, GaN, etc [12,13]. The main idea of this is to combine magnonics with conventional CMOS technologies.…”
Section: Introductionmentioning
confidence: 99%
“…В то же время используемая технология жидкофазной эпитаксии (ЖФЭ) [4] получения пленок ЖИГ существенно ограничивает перспективы их интеграции с полупроводниковыми технологиями, результатом которой может быть создание монолитных гибридных устройств. В этой связи в последнее время существенно возрос интерес к альтернативным технологиям получения пленок ЖИГ и, в частности, к методу ионно-лучевого распыления [5] не только на подложки ГГГ (гадолинийгаллиевый гранат) [6], но и на полупроводниковые подложки [7][8][9]. В настоящей работе сообщается о результатах исследования магнитоупругих свойств пленок ЖИГ, полученных методом ионно-лучевого испарения на подложки Si и GaAs.…”
Section: Introductionunclassified