Vanadium-doped La 3 Ga 5.5 Ta 0.5 O 14 single crystal (0.05 mol% in the melt with respect to Ga) grown by the Czochralski method has been investigated using electron paramagnetic resonance (EPR) and optical absorption measurements. The optical energy gap of pure La 3 Ga 5.5 Ta 0.5 O 14 single crystal is equal to 4.94 eV, while the value for vanadium-doped La 3 Ga 5.5 Ta 0.5 O 14 single crystal is 3.44 eV. Optical absorption measurements have revealed 444 nm, 700 nm and 1100 nm bands arising mainly from V 3+ ions at octahedral sites. Moreover, V 4+ ions were found at octahedral sites (525 nm band) for the "as-grown" crystals and at tetrahedral positions (380 nm CT band and 600-and 800 nm dd transitions) for crystals irradiated with γ-quanta with a dose of 1.2 × 10 5 Gy. The X-band EPR measurements have been done at room temperature while rotating the single-crystal sample around a, b* and c crystal axes. For each rotation direction the observed spectra consist of an intense multiline signal centred at ∼ 340 mT and a second, weak one at ∼ 150 mT. The dominant signal can be ascribed to the V 4+ ions (S = 1/2, I = 7/2) occupying the Ga1, Ta octahedral positions, with an axial D 3 point symmetry. The principal tensor values are determined as g || = 1.925(5), g ⊥ = 1.958(5), A || = 17.0(5) mT and A ⊥ = 5.8(5) mT. Each principal axis of the vanadium paramagnetic centres indeed reveals three different orientations in La 3 Ga 5.5 Ta 0.5 O 14 crystal with respect to the space orientation of the Ga3 tetrahedra connected with the Ga1 octahedron. The low-field resonance signal could neither be ascribed to iron impurities nor to the V 4+ ions (S = 1/2, I = 7/2) occupying other (tetrahedral) positions simultaneously creating the vacancy state. This signal was too weak to perform detailed analysis. There are also presented low-temperature EPR spectra that did not reveal any new lines.La 3 Ga 5.5 Ta 0.5 O 14 (LGT) and related compounds belongs to a family of oxides having Ca 3 Ga 2 Ge 4 O 14 -type structure [1]. The LGT crystals have trigonal structure with space group P321, class 32; accordingly, they are expected to exhibit piezoelectric and nonlinear optical properties. Recently, they have become promising for acousto-electronic applications and for design of piezoelectric sensors [2,3]. Advantageously important optical activity of LGT and LGN (La 3 Ga 5.5 Nb 0.5 O 14 ) has been noticed, too [4,5]. In addition, LGT crystals reveal no structural phase transition between room temperature and the melting point (1470 °C) [2], thus facilitating potential applications in this temperature range.Another promising feature of all the crystals mentioned above is related to the fact that they can be doped by both rare-earth and transition-metal ions. Laser performance of LGS (La 3 Ga 5 SiO 14 ) doped with