Magnetic resonance studies of shallow donors in zinc oxide

González, C. E.; Block, D.; Cox, R.T.; Hervé, A.

doi:10.1016/0022-0248(82)90351-7

Cited by 80 publications

(54 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The hyperfine splitting for the gallium spectrum in Fig. 2 is 6.7 G, and this compares favorably to the estimate of 4.2 G made by Gonzalez et al 18 from an unresolved EPR spectrum in a gallium-doped sample. It is possible that chlorine donors might be responsible for the fourline pattern in Fig.…”

supporting

confidence: 74%

See 1 more Smart Citation

Production of nitrogen acceptors in ZnO by thermal annealing

Garces

Giles

Halliburton

et al. 2002

Applied Physics Letters

200

107

View full text Add to dashboard Cite

Nitrogen acceptors are formed when undoped single crystals of zinc oxide (ZnO) grown by the chemical-vapor transport method are annealed in air or nitrogen atmosphere at temperatures between 600 and 900 °C. After an anneal, an induced near-edge absorption band causes the crystals to appear yellow. Also, the concentration of neutral shallow donors, as monitored by electron paramagnetic resonance (EPR), is significantly reduced. A photoinduced EPR signal due to neutral nitrogen acceptors is observed when the annealed crystals are exposed to laser light (e.g., 364, 442, 458, or 514 nm) at low temperature. The nitrogens are initially in the nonparamagnetic singly ionized state (N−) in an annealed crystal, because of the large number of shallow donors, and the light converts a portion of them to the paramagnetic neutral acceptor state (N0).

show abstract

supporting

confidence: 74%

“…We did not observe, in our samples, the ten-line EPR spectrum previously assigned to indium shallow donors. 18 In Fig. 1͑c͒, we show the effect of laser light on our crystal that was annealed in air at 700°C.…”

mentioning

confidence: 99%

Production of nitrogen acceptors in ZnO by thermal annealing

Garces

Giles

Halliburton

et al. 2002

Applied Physics Letters

200

107

View full text Add to dashboard Cite

show abstract

“…The line width was 21 G considerably larger than in the earlier reports. In the same work first experimental evidence was given for the Ga donor [48,49], a similar interpretation was used quite recently [50] (see Fig. 8 for the EPR spectrum in a bulk ZnO sample with gallium as trace impurity).…”

Section: Magnetic Resonance Investigationsmentioning

confidence: 88%

“…8 for the ESR spectrum of an aluminum unintentionally doped sample). An important aspect was that the donors are not isolated but the electrons move from site to site by hopping conduction or depending on the concentration form an impurity band [48]. The motional narrowing of the ESR lines will average out the hyperfine interactions and an identification of the donor is not possible.…”

Section: Magnetic Resonance Investigationsmentioning

confidence: 99%

Bound exciton and donor–acceptor pair recombinations in ZnO

Meyer

Alves

Hofmann

et al. 2004

Physica Status Solidi (b)

1,608

153

1,169

View full text Add to dashboard Cite

The optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements. At liquid helium temperature in undoped crystals the neutral donor bound excitons dominate in the PL spectrum. Two electron satellite transitions (TES) of the donor bound excitons allow to determine the donor binding energies ranging from 46 to 73 meV. These results are in line with the temperature dependent Hall effect measurements. In the as-grown crystals a shallow donor with an activation energy of 30 meV controls the conductivity. Annealing annihilates this shallow donor which has a bound exciton recombination at 3.3628 eV. Correlated by magnetic resonance experiments we attribute this particular donor to hydrogen. The Al, Ga and In donor bound exciton recombinations are identified based on doping and diffusion experiments and using secondary ion mass spectroscopy. We give a special focus on the recombination around 3.333 eV, i.e. about 50 meV below the free exciton transition. From temperature dependent measurements one obtains a small thermal activation energy for the quenching of the luminescence of 10 ± 2 meV despite the large localization energy of 50 meV. Spatially resolved CL measurements show that the 3.333 eV lines are particularly strong at crystal irregularities and occur only at certain spots hence are not homogeneously distributed within the crystal contrary to the bound exciton recombinations. We attribute them to excitons bound to structural defects (Y-line defect) very common in II-VI semiconductors. For the bound exciton lines which seem to be correlated with Li and Na doping we offer a different interpretation. Li and Na do not introduce any shallow acceptor level in ZnO which otherwise should show up in donor -acceptor pair recombinations. Nitrogen creates a shallow acceptor level in ZnO. Donor -acceptor pair recombination with the 165 meV deep N-acceptor is found in nitrogen doped and implanted ZnO samples, respectively. In the best undoped samples excited rotational states of the donor bound excitons can be seen in low temperature PL measurements. At higher temperatures we also see the appearance of the excitons bound to the B-valence band, which are approximately 4.7 meV higher in energy.

show abstract

“…The full width at half maximum (FWHM) is about 130 meV for x≤3% and about 150 meV for x=4.6%. The Pl spectra at low temperature show the disappearance of the typical fine structure of ZnO [18][19][20][21][22][23][24] and the appearance of the shoulder at low energy which becomes more intense and wide as x increases. This is presumably due to larger compositional fluctuation and poorer crystallinity for larger x films.…”

Section: Samplementioning

confidence: 99%

Structural, morphology and optical properties of Zn_(1-x)Cd_xO solid solution grown on c-plane sapphire substrate

Fouzri

Boukadhaba

Oumezzine

et al. 2012

EPJ Web of Conferences

View full text Add to dashboard Cite

Abstract. Zn (1-x) Cd x O solid solutions with a composition ranging from pure ZnO up to x=0.046 have been grown on cplane sapphire substrates by using metal organic chemical vapor deposition (MO-CVD). The lattice deformation, morphology and optical properties of these films were examined in detail using high resolution X-ray diffraction, atomic force microscopy (AFM) and photoluminescence (PL) as Cd incorporation. Our study reveals significant microstructure modification of Zn (1-x) Cd x O from x≥0.7% but single phase of wurtzite structure is maintained for all films. The Pl spectra and the band gap of the Zn(1-x)CdxO film show red shift to visible light range which is interpreted in terms of band gap modulation due to Cd incorporation. Increase of Cd content leads to the emission broadening with growing lower energy peak (at 10K) and degraded crystallinity.

show abstract

Magnetic resonance studies of shallow donors in zinc oxide

Cited by 80 publications

References 18 publications

Production of nitrogen acceptors in ZnO by thermal annealing

Production of nitrogen acceptors in ZnO by thermal annealing

Bound exciton and donor–acceptor pair recombinations in ZnO

Structural, morphology and optical properties of Zn_(1-x)Cd_xO solid solution grown on c-plane sapphire substrate

Contact Info

Product

Resources

About

Magnetic resonance studies of shallow donors in zinc oxide

Cited by 80 publications

References 18 publications

Production of nitrogen acceptors in ZnO by thermal annealing

Production of nitrogen acceptors in ZnO by thermal annealing

Bound exciton and donor–acceptor pair recombinations in ZnO

Structural, morphology and optical properties of Zn(1-x)CdxO solid solution grown on c-plane sapphire substrate

Contact Info

Product

Resources

About

Structural, morphology and optical properties of Zn_(1-x)Cd_xO solid solution grown on c-plane sapphire substrate