Magnetic Scattering of Spin Polarized Carriers in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo stretchy="false">(</mml:mo><mml:mi>In</mml:mi><mml:mo>,</mml:mo><mml:mi>Mn</mml:mi><mml:mo stretchy="false">)</mml:mo><mml:mi>Sb</mml:mi></mml:math>Dilute Magnetic Semiconductor

Csontos, Miklós; Wójtowicz, T.; Liu, X.; Dobrowolska, M.; Jankó, Boldizsár; Furdyna, J. K.; Mihály, G.

doi:10.1103/physrevlett.95.227203

Cited by 51 publications

(14 citation statements)

References 18 publications

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“…Another point of note is that the measured hole concentration of ϳ10 19 cm −3 for our films is lower than that reported for In 1−x Mn x Sb films grown by LT-MBE of ϳ10 20 cm −3 . [17][18][19] However, the mobility at 300 K of the MOVPE grown films is higher than that of MBE-grown films.…”

Section: B Hall Effect and Magnetic Propertiesmentioning

confidence: 91%

“…Magnetotransport studies on InMnSb thin films grown by LT-MBE have been previously reported. 17,18 Initial measurements on In 1−x Mn x Sb films indicate that scattering of carriers by isolated Mn 2+ ions is the dominant mechanism, leading to a negative magnetoresistance for temperatures up to 12 K. 19 These LT-MBE alloys show well-defined magnetic hysteresis loops and an anomalous Hall effect ͑AHE͒. The Curie temperature ͑T C ͒ measured in these samples is very low, on the order of 7-20 K. Recently, however, we have shown that single phase In 1−x Mn x Sb films grown by MOVPE are ferromagnetic at room temperature with a T C in excess of 400 K. 20 Ferromagnetism was supported by field-cooled ͑FC͒ and zero-field-cooled ͑ZFC͒ magnetization measurements and by clear hysteresis in the anomalous Hall resistivity.…”

Section: Introductionmentioning

confidence: 99%

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Magnetotransport properties of InMnSb magnetic semiconductor thin films

et al. 2010

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We report on the magnetotransport properties of epitaxial thin films of In 1−x Mn x Sb dilute magnetic semiconductor grown by metal-organic vapor-phase epitaxy. At temperatures below 10 K, a negative magnetoresistance dominates the magnetotransport that is attributed to spin-dependent scattering by localized magnetic moments. Above 10 K, the magnetoresistance is positive and is well described by a two-band model consisting of spin-split hybridized p-d subbands with different conductivities. Hall effect measurements show an anomalous behavior that persists up to room temperature, providing an indication of ferromagnetic order. In addition, magnetization measurements reveal distinct hysteresis loops at room temperature which confirms the ferromagnetism of the films.

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Section: B Hall Effect and Magnetic Propertiesmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Magnetotransport properties of InMnSb magnetic semiconductor thin films

et al. 2010

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“…Pressure has proven to be an effective and clean means to tune the lattice and electron degrees of freedom in topological materials. There have been several reports on pressure tuning of anomalous transports like in dilute magnetic semiconductor (In, Mn)Sb [27][28][29] and MnSi [30]. To the best of our knowledge, the highest pressure achieved is generally smaller than 3 GPa.…”

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confidence: 99%

Pressure-tunable large anomalous Hall effect of the ferromagnetic kagome-lattice Weyl semimetal Co3Sn2S2

Chen

Wang

et al. 2019

Phys. Rev. B

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We investigate the pressure evolution of the anomalous Hall effect in magnetic topological semimetal Co3Sn2S2 in diamond anvil cells with pressures up to 44.9-50.9 GPa. No evident trace of structural phase transition is detected through synchrotron x-ray diffraction over the measured pressure range of 0.2-50.9 GPa. We find that the anomalous Hall resistivity and the ferromagnetism are monotonically suppressed as increasing pressure and almost vanish around 22 GPa. The anomalous Hall conductivity varies non-monotonically against pressure at low temperatures, involving competition between original and emergent Weyl nodes. Combined with first-principle calculations, we reveal that the intrinsic mechanism due to the Berry curvature dominates the anomalous Hall effect under high pressure.Topological semimetals possess a nontrivial band topology in momentum space, leading to many novel properties such as chiral magnetic effect, ultrahigh mobility, negative longitudinal magnetoresistance and threedimensional quantum Hall effect [1][2][3][4][5]. Recently, nonmagnetic topological semimetals have been predicted in a large amount of crystals through first-principle calculations [6][7][8], some of which have been confirmed experimentally. However, realistic intrinsic magnetic topological semimetals are extremely rare. The entanglement between magnetism and nontrivial topology could further enrich the physical properties of quantum states, resulting in exotic transport phenomena such as large anomalous Hall effect (AHE) [9][10][11]. The AHE, usually driven by the spontaneous magnetization rather than an external magnetic field, not only deepens the understanding of topology and geometry of Bloch electrons in crystals without time reversal symmetry [12,13] but also inspires potential applications of quantum materials in next generation electronics [14,15].Very recently, a series of experiments suggest that Shandite-type compound Co 3 Sn 2 S 2 can be a magnetic Weyl semimetal and shows a giant anomalous Hall conductivity (AHC) [16,17]. Co 3 Sn 2 S 2 consists of Co 3 Sn layers sandwiched by sulfur atoms. It is known as a halfmetallic ferromagnet, whose magnetism originates from the magnetic cobalt atoms on a kagome lattice in the a-b plane with the spontaneous polarization along the c axis [18][19][20]. The interplay between this out-of-plane magnetization and the nontrivial topology of the Bloch bands accounts for the novel electromagnetic responses [16,17,[21][22][23][24][25][26]. Pressure has proven to be an effective and clean means to tune the lattice and electron degrees of freedom in topological materials. There have been several reports on pressure tuning of anomalous transports like in dilute magnetic semiconductor (In, Mn)Sb [27][28][29] and MnSi [30]. To the best of our knowledge, the highest pressure achieved is generally smaller than 3 GPa. The studies on how higher pressures modify the anomalous Hall transports in quantum materials are highly desirable. In addition, unlike the conventional element substitution meth...

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“…The magnetoresistance (MR) has been defined as: We observed a well pronounced minimum on the temperature dependence of resistance, R, at about T k ≈ 40K (Fig.3), which should be attributed to Kondo-like behaviour. Few different mechanisms might be considered to explain an increase of the resistivity of a metallic microwire at low temperatures: magnetic Kondo effect, weak localization, enhanced electron-electron interaction, scattering of conduction electrons by structural two-level system (TLS) and scattering of strongly spin-polarized charge carriers on diluted magnetic moments [21][22][23][24]. Figure 3 shows that in the present case the temperature dependence of the resistivity below 40 K has a form typical for the Hamann model [25].…”

Section: Methodsmentioning

confidence: 99%

Magnetic and Transport properties of Co-Cu Microwires

Zhukova

Val

Ipatov

et al. 2014

International Journal on Smart Sensing and Intelligent Systems

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We report on the magnetic, transport and structural properties of Co x-Cu 100-x (5≤x≤40) glass-coated microwires. For x=5 we observed the resistivity minimum at 40 K associated with the Kondo effect. For x ≥ 10 we observed considerable magnetoresistance effect. Temperature dependence of susceptibility show considerable difference for x>10 and x≤ 10 attributed to the presence of small Co grains embedded in the Cu matrix for x≥ 10. Using X-ray diffraction we found, that the structure of Co x-Cu 100-x microwires x ≥ 10 is granular consisting of two phases: fcc Cu appearing in all the samples and fcc α-Co presented only in microwires with higher Co content.

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Magnetic Scattering of Spin Polarized Carriers in(In,Mn)SbDilute Magnetic Semiconductor

Cited by 51 publications

References 18 publications

Magnetotransport properties of InMnSb magnetic semiconductor thin films

Magnetotransport properties of InMnSb magnetic semiconductor thin films

Pressure-tunable large anomalous Hall effect of the ferromagnetic kagome-lattice Weyl semimetal Co3Sn2S2

Magnetic and Transport properties of Co-Cu Microwires

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