2021
DOI: 10.1007/s00339-021-04949-0
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Magnetic structure, mechanical stability and thermoelectric properties of VTiRhZ (Z = Si, Ge, Sn) quaternary Heusler alloys: first-principles calculations

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Cited by 15 publications
(9 citation statements)
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“…The transport coefficients are considered by applying the Boltzmann transport theory as implemented in BoltzTraP code [37,38]. The S, σ, and κ e parameters are estimated using the following equations [24,39]:…”
Section: Computational Methodologymentioning
confidence: 99%
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“…The transport coefficients are considered by applying the Boltzmann transport theory as implemented in BoltzTraP code [37,38]. The S, σ, and κ e parameters are estimated using the following equations [24,39]:…”
Section: Computational Methodologymentioning
confidence: 99%
“…There are several studies on the subject of the thermoelectric properties of QHAs. For instance, Alqurashi and Hamad predicted ZT values of 1.13, 0.62, and 0.92 for VTiRhSi, VTiRhGe, and VTiRhSn alloys, respectively, at 800 K [24]. Previous computations predicted maximum S values of 44.3 and 53.44 µV/K for CoRuMnAs and CoRhMnAs alloys, respectively [11].…”
Section: Introductionmentioning
confidence: 95%
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“…2 shows the maximum ZT achieved for bulk thermoelectric materials over the past six years as a function of temperature. 33–234…”
Section: Strategiesmentioning
confidence: 99%
“…Through the surveyed literature, it was found that Heusler alloys (HA) were broadly divided into four components namely; direct full-HA that crystallizes in L2 1 structure, consisting of four inter-penetrating face centered cubic (FCC) lattices with space group-225 (Fm-3m), inverse full-HA crystallizes in C1 b type structure with space group-216 (F-43m), half-HA that belongs to C1 b type structure, consisting of three in-equivalent atoms forming inter-penetrating FCC sub-lattices, and Quaternary-HA (QHA) that fits in C1 b structure with four in-equivalent atoms [3,8,9]. Over the last few decades, the theoretical and the experimental insight into novel semi-conducting QHA for TE devices have attracted much attention as they fulfill all the requisites for the materials to be utilized in the TE devices such as mechanical and thermal stability, non-toxicity, availability and the cost-effectiveness [10][11][12][13][14][15][16][17]. Also, the ease of tuning electronic properties through the band gap engineering.…”
Section: Introductionmentioning
confidence: 99%