Magnetic structure of epitaxially grown MnAs on GaAs(001)

Schippan, F.; Behme, G.; Däweritz, L.; Dennis, B. R.; Neumann, K.‐U.; Ziebeck, K.R.A.

doi:10.1063/1.1287607

Cited by 97 publications

(83 citation statements)

References 7 publications

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“…Furthermore it is important that owing to the MnAs crystalline anisotropy the uniaxial hard axis for magnetization of the film is oriented along the MnAs[0001] direction and the magnetic moments are lying in the MnAs(0001) plane. The values for the crystalline anisotropy constants for the in-plane MnAs[1120] direction and the out-of-plane MnAs[1 100] direction are nearly the same [19]. Therefore the shape anisotropy of the MnAs stripes and the direction of an external magnetic field have a strong influence on the observed magnetic properties.…”

Section: Featurementioning

confidence: 76%

Self‐organization and finite size effects in epitaxial ferromagnetic MnAs films on GaAs

Däweritz

Herrmann

2007

Physica Status Solidi (b)

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The self-organized striped structure of coexisting α-MnAs and β-MnAs, characteristic for MnAs films grown on GaAs(001) by molecular beam epitaxy under As-rich conditions at low temperature, has been studied in samples prepared under conditions closer to the equilibrium. Whereas the period of the stripe pattern is independent on the preparation procedure, the width of the ferromagnetic α-MnAs stripes increases. Thus, the aspect ratio p between the stripe width L and the stripe thickness t can be varied over a wide range. The magnetic properties of the finite-size magnetic system are investigated as a function of the ratio p at room temperature. The transition from type-I domains with meander-like contrast in the magnetic force microscopy (MFM) image to type-II domains with a line-shaped contrast due to the division of the stripe into N subdomains across the stripe occurs at p ratios expected from a model based on the shape anisotropy. Besides the well-known N = 3 type-II domains also type-II domains with N = 4, 5 were detected. When the stripe width approaches the period of the self-organized structure, the boundary between two neighboring stripes is imaged as chessboard-like contrast in the MFM pattern. The shape of the magnetic hysteresis loops changes with the p ratio or, in other words, with the predominance of inplane or out-of plane magnetic moments in the demagnetized state.

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Section: Featurementioning

confidence: 76%

Self‐organization and finite size effects in epitaxial ferromagnetic MnAs films on GaAs

Däweritz

Herrmann

2007

Physica Status Solidi (b)

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“…In neighbouring domains, the magnetic moments are oriented opposite to each other, i.e., along [1120] and [1120], respectively. Since [0001] is the hard axis of magnetization and the out-of-plane [1100] direction is a medium axis of magnetization, the rotation of the magnetic moment occurs via an out-of-plane rotation, giving rise to the observed magnetic contrast [23]. This meander-like contrast is due to domain walls of the Bloch-type.…”

Section: B Mnas-on-gaasmentioning

confidence: 99%

Epitaxial hybrid ferromagnet-semiconductor structures: growth, structural and magnetic properties

Däweritz¹

2004

Braz. J. Phys.

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Ferromagnet-semiconductor heterostructures are promising materials for the integration of magnetic or spin related functions into semiconductor materials and devices. Fe-on-GaAs and MnAs-on-GaAs are canditates for potential room temperature applications. We review our recent results on growth, structural and magnetic properties of these materials, and their use as spin injectors. The most critical issue of Fe/GaAs heterostructures is the delicate interface formation during epitaxy and its possible modification during subsequent processing. The properties of the MnAs/GaAs heterostructures are intimately related to the phase transition between ferromagnetic and paramagnetic phases.

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“…The domain structure is governed by topography as with the previous work, 12) and it depends on the structural properties of the thin film, i.e., the surface orientation, thickness and defects. In the case of the present sample, the characteristic fair rectangular defects make local nonmagnetic areas on the surface.…”

Section: Mnas On Gaas (001)mentioning

confidence: 99%

Magnetic Domain Structure of MnAs Thin Films as a Function of Temperature

et al. 2003

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We have investigated magnetic domain structures of MnAs thin films grown on GaAs substrates by a magnetic force microscope. We observed, by an atomic force microscope, rectangular defects along GaAs [110] direction which disperse randomly on the surface of MnAs/ GaAs (001). The Curie temperature of MnAs is 45 C, and it is successfully confirmed directly by the variable temperature magnetic force microscope observation. We also investigated magnetic domain structures of MnAs/GaAs (111)B, and no apparent relation was observed between the topographic structure and the magnetic domain structure.

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Magnetic structure of epitaxially grown MnAs on GaAs(001)

Cited by 97 publications

References 7 publications

Self‐organization and finite size effects in epitaxial ferromagnetic MnAs films on GaAs

Self‐organization and finite size effects in epitaxial ferromagnetic MnAs films on GaAs

Epitaxial hybrid ferromagnet-semiconductor structures: growth, structural and magnetic properties

Magnetic Domain Structure of MnAs Thin Films as a Function of Temperature

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