Magnetic susceptibility and electrical resistivity of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">La</mml:mi><mml:mi mathvariant="normal">Mn</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ca</mml:mi><mml:mi mathvariant="normal">Mn</mml:mi><mml:msub><mml:mi mathvariant

Souza, J. A.; Neumeier, J. J.; Bollinger, R. K.; McGuire, B.; Santos, C. A. M. dos; Terashita, H.

doi:10.1103/physrevb.76.024407

Cited by 46 publications

(26 citation statements)

References 29 publications

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“…Inset is the plot of Ln(q/T) vs. 1/T, revealing a linear correlation in association with the model of small polaron. 29 As seen from the two insets in Fig. 4, the thickness dependencies of T c and T b are similar to each other, implying the increase of T c is indeed from the increase of the exchange field within nano-grain of LMO instead of total magnetization.…”

supporting

confidence: 58%

Strain controlled orbital state and magnetization in insulating LaMnO3+δ films

Zhang

Cheng

Lin

et al. 2015

Journal of Applied Physics

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LaMnO3+δ films with various thicknesses were grown on LaAlO3 (001) single crystal substrate to investigate the effect of in-plane compressive strain (∼−0.57%) on magnetic properties. All films exhibit a blocking temperature Tb at which the zero field cooled magnetization reaches a maximum, indicating the ferromagnetic (FM) nanoclusters are embedded in the background of antiferromagnetic (AFM) matrix. The onset temperature of FM transition Tc and Tb is increased by 24% and 89%, respectively, with the thickness decreasing from 82.4 nm to 9.2 nm. Simultaneously, the saturation magnetization greatly increases by 309%, which is ascribed to the strain-induced transition of AFM to FM phase due to the orbital order structure switching from x2− 1/y2−1 [A-type] to (x2− y2) + (z2− 1) [F-type].

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supporting

confidence: 58%

Strain controlled orbital state and magnetization in insulating LaMnO3+δ films

Zhang

Cheng

Lin

et al. 2015

Journal of Applied Physics

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“…This model was put forward by a number of previous reports on LaMnO 3 as well as other doped manganese oxides displaying the CMR effect. [24][25][26] For the quantitative analysis of the ͑T͒ data, we remind that the transport of polarons consists of a thermally activated hopping described by the following expression 27,28 …”

Section: B Transport Propertiesmentioning

confidence: 99%

Jahn-Teller-induced crossover of the paramagnetic response in the singly valentegsystemLaMn7O12
Cabassi
¹
,
Bolzoni
²
,
Gilioli
³

et al. 2010
Phys. Rev. B
16
1
15
0
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We investigate the high-temperature magnetic and transport properties of LaMn 7 O 12 , which displays a similar perovskitelike structure and the same single-valent Mn 3+ properties of LaMnO 3 but a much simpler Jahn-Teller ͑JT͒ distortion at T JT = 650 K. We find that the magnetic response of LaMn 7 O 12 is similar to that of LaMnO 3 below T JT , but strikingly different in the undistorted phase above T JT , where the Curie-Weiss susceptibility is strongly suppressed. Electrical resistivity and thermopower measurements unveil a concomitant crossover from nonadiabatic to adiabatic small polaron regime. This suggests that the above suppression is due to low-spin electron-hole dimers formed by the e g charge transfer between Mn sites and stabilized by the slow JT dynamics above T JT .

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“…Conductivity of n-type in CaMnO 3−δ with different stoichiometry is characterized with small values 0.02-0.16 eV of the activation energy E σ at 150-600 K [1,7,13,[20][21][22]. Heating in air at 400-600°C is accompanied with the increase of conductivity and with the increase of the activation energy E σ to about 0.4 eV [7,21].…”

Section: Introductionmentioning

confidence: 99%

Electron transport in CaMnO3 − δ at elevated temperatures: a mobility analysis

Goldyreva

Леонидов

Патракеев

et al. 2013

J Solid State Electrochem

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The drift mobility of electron charge carriers in oxygen non-stoichiometric manganite CaMnO 3− δ was calculated by combining the total electrical conductivity and oxygen non-stoichiometry data at 700-950°С and oxygen partial pressure varying between 10 −6 and 1 atm. The carrier concentration changes with pressure and temperature were obtained with the help of the earlier-developed defect model involving reactions of oxygen exchange and thermal excitation of manganese sites. The activation energy for mobility is found to increase with oxygen non-stoichiometry. High-temperature electron transport properties of the manganite CaMnO 3−δ can be explained in terms of activated jumps of n-type small polarons in adiabatic regime. The relatively small mobility of charge carriers is explained by strong localization of polarons on manganese sites.

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Magnetic susceptibility and electrical resistivity ofLaMnO3,CaMn

Cited by 46 publications

References 29 publications

Strain controlled orbital state and magnetization in insulating LaMnO3+δ films

Strain controlled orbital state and magnetization in insulating LaMnO3+δ films

Jahn-Teller-induced crossover of the paramagnetic response in the singly valentegsystemLaMn7O12
Cabassi
¹
,
Bolzoni
²
,
Gilioli
³

et al. 2010
Phys. Rev. B
16
1
15
0
View full text Add to dashboard Cite

Electron transport in CaMnO3 − δ at elevated temperatures: a mobility analysis

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Magnetic susceptibility and electrical resistivity ofLaMnO3,CaMn

Cited by 46 publications

References 29 publications

Strain controlled orbital state and magnetization in insulating LaMnO3+δ films

Strain controlled orbital state and magnetization in insulating LaMnO3+δ films

Jahn-Teller-induced crossover of the paramagnetic response in the singly valentegsystemLaMn7O12Cabassi1, Bolzoni2, Gilioli3 et al. 2010Phys. Rev. B161150View full textAdd to dashboardCite

Electron transport in CaMnO3 − δ at elevated temperatures: a mobility analysis

Contact Info

Product

Resources

About

Jahn-Teller-induced crossover of the paramagnetic response in the singly valentegsystemLaMn7O12
Cabassi
¹
,
Bolzoni
²
,
Gilioli
³

et al. 2010
Phys. Rev. B
16
1
15
0
View full text Add to dashboard Cite