“…6 b). This behavior evidences significant a magnetic switching control on resistive properties, which makes these multilayers a promising material for Magnetic Resistive Random Access Memories (M-RRAM) 41 . Figure 10 I-V curves with applied magnetic field of ( a ) , ( b ) , and ( c ) , multilayers with Ts = 300 K. Insets show the changes in the resistive switching.…”
Section: Analysis and Resultsmentioning
confidence: 88%
“…For the construction of non-volatile memories based on resistive random access memory (RRAM) technology, thin layers of metal oxides have been used with metal–insulator-metal (MIM) structures described as two-terminal devices and in which the switching between two resistive states 40 . As an insulating material, the use of semiconductor oxides with a thin layer structure 41 , nanoparticles 40 , and more recently, nanotubes 16 has been implemented. In the case of nanoparticles, it has been shown that the density and homogeneity of the nanoparticles affect resistive changes, as well as the possible interactions between the interfaces.…”
This work present structural, morphological, magnetic, and electrical properties of GaSb/Mn multilayer deposited via DC magnetron sputtering at room temperature and at 423 K. The samples are characterized by forming layers of 3, 6 and 12 periods of the GaSb/Mn structure. Through XRD patterns, it was possible to stablish the formation of GaSb, Mn3Ga, and Mn2Sb2 phases. FTIR measurements present an optical interference associated with periodicity and the homogenous thickness of the layers. HR-SEM shows the multilayer architecture with columnar microstructure in the formation of layers with grain nucleation on the surface. A ferromagnetic-like behavior was observed in the multilayers at room temperature related to the domains and interlayers interaction. Additionally, the hysteresis curves present shifts attributed to the effect of exchange bias coupling. I-V curves show RESET-SET states of the multilayer system with bipolar resistive behavior, which can be modified by external magnetic fields. The resistive switching evidenced corresponds to the conductive mechanism based on the capacitive conductance and the formation of conductive filaments in multilayer structure.
“…6 b). This behavior evidences significant a magnetic switching control on resistive properties, which makes these multilayers a promising material for Magnetic Resistive Random Access Memories (M-RRAM) 41 . Figure 10 I-V curves with applied magnetic field of ( a ) , ( b ) , and ( c ) , multilayers with Ts = 300 K. Insets show the changes in the resistive switching.…”
Section: Analysis and Resultsmentioning
confidence: 88%
“…For the construction of non-volatile memories based on resistive random access memory (RRAM) technology, thin layers of metal oxides have been used with metal–insulator-metal (MIM) structures described as two-terminal devices and in which the switching between two resistive states 40 . As an insulating material, the use of semiconductor oxides with a thin layer structure 41 , nanoparticles 40 , and more recently, nanotubes 16 has been implemented. In the case of nanoparticles, it has been shown that the density and homogeneity of the nanoparticles affect resistive changes, as well as the possible interactions between the interfaces.…”
This work present structural, morphological, magnetic, and electrical properties of GaSb/Mn multilayer deposited via DC magnetron sputtering at room temperature and at 423 K. The samples are characterized by forming layers of 3, 6 and 12 periods of the GaSb/Mn structure. Through XRD patterns, it was possible to stablish the formation of GaSb, Mn3Ga, and Mn2Sb2 phases. FTIR measurements present an optical interference associated with periodicity and the homogenous thickness of the layers. HR-SEM shows the multilayer architecture with columnar microstructure in the formation of layers with grain nucleation on the surface. A ferromagnetic-like behavior was observed in the multilayers at room temperature related to the domains and interlayers interaction. Additionally, the hysteresis curves present shifts attributed to the effect of exchange bias coupling. I-V curves show RESET-SET states of the multilayer system with bipolar resistive behavior, which can be modified by external magnetic fields. The resistive switching evidenced corresponds to the conductive mechanism based on the capacitive conductance and the formation of conductive filaments in multilayer structure.
“…Therefore, the combination of the RS and magnetic modulation gives rise to the integration of ferromagnetism and electrical properties into an RS device with a Pt/Co:ZnO/Pt structure, which is promising for broadening the applications from RS behavior to magnetism controlled multifunctional devices. 88,89 Based on the above research, a magnetic field controlled ReRAM device with a Ag/[BiFeO 3 /g-Fe 2 O 3 ]/FTO structure was also designed. 38 Fig.…”
Resistive random access memory (ReRAM) based on resistive switching (RS) effect is a new type of non-volatile memory device that stores information based on the reversible conversion of resistance states...
“…Tunneling Magnetoresistance (TMR) [4], Giant Magnetoresistance (GMR) [5,6] and Johnson transistors [7] are the most used methods to polarize spins of a non-magnetic material. The most common usage areas of spintronic materials in recent years are magnetic sensors [8], magnetic random-access memories [9,10], spin-polarized light emitting diodes [11,12] and spin-polarized field effect transistors [13] can be given as examples.…”
The half-metallic calculations of new variant perovskites Li2CrO6 and Li2CuO6 were carried out by using WIEN2k computational code. First, the ferromagnetic (FM) and non-magnetic (NM) phases were compared, and FM phases were obtained energetically more stable. The equilibrium lattice constants were obtained as 7.63 Å and 7.66 Å for Li2CrO6 and Li2CuO6, respectively. Second, the electronic calculations were performed, and the semiconduction properties were seen in spin-up states while spin-down states showed metallic nature. The band gaps were obtained as 1.806 eV and 1.177 eV for Li2CrO6 and Li2CuO6, respectively. Since variant perovskites Li2CrO6 and Li2CuO6 showed 100% spin polarizations, these were obtained as true half-metallic ferromagnetic materials. Then the total magnetic moments were obtained as 4.00 μB/f.u., 5.00 μB/f.u. When both the electronic and magnetic properties of the compounds are examined, the variant perovskites Li2CrO6 and Li2CuO6 are suitable materials for spintronics applications.
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