Magnetic transport properties of semimagnetic semiconductor Hg1−x−yCrxMnySe

Abstract

Experimental results of investigations of monocrystalline samples of Hg1−x−yCrxMnySe solid solution indicate, first, a considerable influence of manganese atoms introduced in Hg1−xCrxSe on the absolute values of physical parameters such as magnetic susceptibility, phase-transition temperature, mobility of conduction electrons, and the period of time during which the samples go over to the equilibrium state, and second, the formation of materials with improved electrophysical and clearly pronounced magnetic characteristics as compared with Hg1−xCrxSe samples with the same concentration of chromium ions.

Structure characterization of MBE-grown (Zn,Cr)Se layers

“…Meanwhile, a progress in the technology also made it possible to grow selected crystals containing up to a few percent of Cr. The bulk Hg 1−x Cr x Se mixed crystals [14,15] were the first DMS of this type, (Zn,Cr)Te and (Zn,Cr)Se thin layers were the next examples ( [16,17,18], respectively). In some cases, the ferromagnetic character of investigated samples was clearly established up to the room temperature, as was reported for (Zn,Cr)Te layers, for which the Cr content corresponds to the Zn 1−x Cr x Te nominal mixed crystal composition x = 0.2 [19,20].…”