Magnetic trap for excitons

Christianen, Peter C. M.; Piazza, Francesco; Lok, J.G.S.; Maan, J.C.; Vleuten, W. van der

doi:10.1016/s0921-4526(98)00273-7

Cited by 29 publications

(24 citation statements)

References 3 publications

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“…[1] For detecting the Bose-Einstein condensation of excitons, it is a prerequisite to define controllable confinement potentials for excitons. So far trapping of excitons has been demonstrated in strained systems, [2], [3], [4] magnetic traps, [5] "natural traps" defined by interface roughness fluctuations, [6] and electrostatic traps. [7], [8], [9], [10] Electrostatic traps generally make use of the quantum confined Stark effect, which allows tuning the energy of excitons in quantum well structures by means of an electric field.…”

Section: Introductionmentioning

confidence: 99%

Micropatterned electrostatic traps for indirect excitons in coupled GaAs quantum wells

et al. 2007

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We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO 2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm².

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Section: Introductionmentioning

confidence: 99%

Micropatterned electrostatic traps for indirect excitons in coupled GaAs quantum wells

et al. 2007

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“…of double quantum wells, provide a model example of dipolar quantum particles12345678. To explore the exotic collective quantum phenomena predicted for indirect excitons91011 studies have emphasized the creation of trapping potentials12131415161718 and gate defined electrostatic traps have led so far to the most advanced realizations61920212223. This technology relies on the dipolar interaction between the well oriented electric dipole of indirect excitons and a spatially varying electric field controlled by the gate electrodes.…”

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confidence: 99%

Optically programmable excitonic traps

Alloing

Lemaı̂tre

Galopin

et al. 2013

Sci Rep

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With atomic systems, optically programmed trapping potentials have led to remarkable progress in quantum optics and quantum information science. Programmable trapping potentials could have a similar impact on studies of semiconductor quasi-particles, particularly excitons. However, engineering such potentials inside a semiconductor heterostructure remains an outstanding challenge and optical techniques have not yet achieved a high degree of control. Here, we synthesize optically programmable trapping potentials for indirect excitons of bilayer heterostructures. Our approach relies on the injection and spatial patterning of charges trapped in a field-effect device. We thereby imprint in-situ and on-demand electrostatic traps into which we optically inject cold and dense ensembles of excitons. This technique creates new opportunities to improve state-of-the-art technologies for the study of collective quantum behavior of excitons and also for the functionalisation of emerging exciton-based opto-electronic circuits.

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“…13 The indirect excitons in CQWs can cool down to these low temperatures due to their long lifetimes and high cooling rates. 14 Indirect excitons in CQWs can be confined by a variety of trapping potentials including strain-induced traps, 15-17 traps created by laser-induced interdiffusion, 18 electrostatic traps, [19][20][21][22] magnetic traps, 23 and optically induced traps. 24 Two of these trap types-the electrostatic and optically induced traps-show promise of rapid and effective control of the excitons by varying in space and time the gate voltage pattern and the laser intensity pattern, respectively.…”

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confidence: 99%

Kinetics of indirect excitons in an optically induced trap in GaAs quantum wells

et al. 2007

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We report on the kinetics of a low-temperature gas of indirect excitons in an optically induced exciton trap. The excitons in the region of laser excitation are found to rapidly-within 4 ns-cool to the lattice temperature T = 1.4 K, while the excitons at the trap center are found to be cold-essentially at the lattice temperatureeven during the excitation pulse. The loading time of excitons to the trap center is about 40 ns, longer than the cooling time yet shorter than the lifetime of the indirect excitons. The observed time hierarchy is favorable for creating a dense and cold exciton gas in optically induced traps and for in situ control of the gas by varying the excitation profile in space and time before the excitons recombine.

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Magnetic trap for excitons

Cited by 29 publications

References 3 publications

Micropatterned electrostatic traps for indirect excitons in coupled GaAs quantum wells

Micropatterned electrostatic traps for indirect excitons in coupled GaAs quantum wells

Optically programmable excitonic traps

Kinetics of indirect excitons in an optically induced trap in GaAs quantum wells

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