Magnetic Tuning of the Photovoltaic Effect in Silicon‐Based Schottky Junctions

Wang, Shuanhu; Wang, Wenxin; Zou, Lvkuan; Zhang, Xu; Cai, Jianwang; Sun, Zhigang; Shen, Baogen; Sun, J. R.

doi:10.1002/adma.201403868

Cited by 39 publications

(33 citation statements)

References 27 publications

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“…6,7,11,12). We note that similar effects (but in the persistent illumination conditions and and for much wider (∼mm) Permalloy films grown over SiO 2 /Si have been very recently reported by Wang et al 27 An important distinction of our experimental configuration is that in our case the transient LPE response to a few kHz laser pulse frequency is determined by the line inductance, capacitance and resistance (see above and 23 ). Therefore, we believe that this makes our experimental method almost insensitive to the slowly changing potential difference developed on the surface of the Si aparted from the ferromagnetic structures.…”

Section: Discussionmentioning

confidence: 76%

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

Martínez

Cascales²,

Lara

et al. 2015

SPIE Proceedings

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The time dependent transient lateral photovoltaic effect (T-LPE) has been studied with microsecond time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21 nm thick, 5, 10 and 20 micron wide and 1500 micron long Co lines grown over naturally passivated p-type Si (100). We have observed a nearly linear dependence of the LPE transient response with the laser spot position. An unusual T-LPE dynamic response with a sign change in the laser-off stage has also been corroborated by numerical simulations. A qualitative explanation suggests a modification of the drift-diffusion model by including the influence of a local inductance. In addition, influence of anisotropic magnetoresistance of the Co line structure on dynamic response on T-LPE has been investigated. Specifically, we have experimentally investigated influence of the direction of the external magnetic field respect to the drift velocity of the photogenerated carriers on the T-LPE. We have observed notable dependence of the T-LPE on the magnetic field in the small field range (below 100 Oe), compatible with anisotropic magnetoresistance values. The strong influence of the magnetization alignment on the dynamic response of photogenerated carriers has been also observed through a phase sensitive lock-in experiment. These findings indicate that the microstructuring of the ferromagnetic line based position sensitive detectors (PSD) could improve their space-time resolution and add capability of magnetic field tuning of the main PSD characteristics.

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Section: Discussionmentioning

confidence: 76%

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

Martínez

Cascales²,

Lara

et al. 2015

SPIE Proceedings

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“…Since its discovery in 19304, a large number of studies have been conducted to explain this effect56789 and improve the sensitivity and linearity of LPE in varieties of PN junction type or MOS type structures, such as interface modification10, external bias1112, quantum dots embedding13, ions implantation14, and so on1516. However, magnetic field controlled LPE was only reported in magnetic materials with quite small variation1718. In this paper, we realized large-range control of LPE by magnetic field with sensitivity as high as 520 mV/T.…”

mentioning

confidence: 83%

Size-dependent magnetic tuning of lateral photovoltaic effect in nonmagnetic Si-based Schottky junctions

Zhou

Gan

Huang

et al. 2017

Sci Rep

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In this article, we report a magnetic tuning lateral photovoltaic effect (LPE) in a nonmagnetic Si-based Schottky junctions. In the magnetic field intensity range of 0 to 1.6 T, the variation amplitude of LPE sensitivity is as high as 94.8%, the change of LPV is and the change rate of lateral photo-voltage even reaches 520 mV/T at 1.5 T, which is apparently higher than the results of previous reported researches in magnetic materials. This effect is attributed to the combined result of the influence of magnetic field on diffusion current and the rectification property of our anisotropic structure. This work may expand the application of LPE in magnetism field such as magnetic sensor and magnetoresistance, and it suggests a new way to investigate the carrier transport in Schottky junctions under magnetic field.

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“…Wang et al. combines soft ferromagnetic (FM) materials with semiconductor (Si) and finds that, both the LPV of the FM and Si layer are coupled to the magnetic alignment of the FM layer . Figure a shows the diagram of experimental measurement, where Permalloy(Ni 80 Fe 20 ) is adopted as the FM material in this structure.…”

Section: Lateral Photovoltaic Effectmentioning

confidence: 99%

Section: Lateral Photovoltaic Effectmentioning

confidence: 99%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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Functionalization of photoelectric effect in nanostructures is presenting a promising strategy for humans to achieve precise detection and efficient transformation. Due to the high applied value, numerous materials and constructions are adopted for photoelectric effect to deliver on its potential performance. Among these functional materials, metal-semiconductor (MS) or metal-oxide-semiconductor (MOS) systems own unparalleled advantage including reliable stability, superb physical performance, and simple fabrication process. Herein, two types of photoelectric effect, lateral photovoltaic and photo-induced resistance effect, in nanostructure MS or MOS systems are reviewed. These effects have great potential in applications and will play a beneficial role in future investigations. In addition, how each component of the system contributes to the photoelectric properties and responds to external fields are detailed, suggesting future study directions in photoelectric fields.

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Magnetic Tuning of the Photovoltaic Effect in Silicon‐Based Schottky Junctions

Cited by 39 publications

References 27 publications

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

Size-dependent magnetic tuning of lateral photovoltaic effect in nonmagnetic Si-based Schottky junctions

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

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