Magnetic tunnel junctions

Zhu, Jian‐Gang; Park, Chando

doi:10.1016/s1369-7021(06)71693-5

Cited by 374 publications

(223 citation statements)

References 51 publications

Supporting

Mentioning

222

Contrasting

Order By: Relevance

“…The planar FG/NG/FG structure is assumed to be in the x-y plane [14]. The y-direction is parallel to the interfaces and the x-direction is normal to it (Fig.…”

Section: Model and Approachmentioning

confidence: 99%

Magnetoresistance in Graphene-Based Ferromagnetic/ Rashba Barrier/Ferromagnetic Heterojunction

Mohammadpour

Hasanirokh

2016

Acta Phys. Pol. A

View full text Add to dashboard Cite

The quantum tunnelling of spin-polarized electrons through a Rashba barrier on a single layer graphene is studied by the scattering matrix method. It is shown that the magnetoresistance, defined as the difference between conductance at the presence and absence of the Rashba spin-orbit interaction, oscillates with the intensity of interaction. These oscillations are also observed in the conductance versus the potential energy of the barrier.

show abstract

“…The planar FG/NG/FG structure is assumed to be in the x-y plane [14]. The y-direction is parallel to the interfaces and the x-direction is normal to it (Fig.…”

Section: Model and Approachmentioning

confidence: 99%

Magnetoresistance in Graphene-Based Ferromagnetic/ Rashba Barrier/Ferromagnetic Heterojunction

Mohammadpour

Hasanirokh

2016

Acta Phys. Pol. A

View full text Add to dashboard Cite

show abstract

“…The drop of resistance is associated with the TMR. One of the factors that affect drop of resistance and TMR is density of states (DOS) at the interface [67][68][69][70][71].…”

Section: Spin Transportmentioning

confidence: 99%

Carbon Nanotube Based Magnetic Tunnel Junctions (MTJs) for Spintronics Application

Titus¹,

Krishna²,

Grácio³

et al. 2011

Electronic Properties of Carbon Nanotubes

View full text Add to dashboard Cite

“…7,8,[17][18][19][20] Controlling SOC plays a key role in the realm of spintronics. [21][22][23] Density functional theory and tight-binding methods have respectively predicted the values of ∆ so = 1.55 meV 7,17,24 and 7.9 meV s for SOC of silicene, roughly 1000 times larger than graphene. [25][26][27] Nonetheless, this term has a negligible effect and could be discarded from energy dispersion for most purposes, 19,28 reconfirmed in effect by our findings here.…”

Section: Introductionmentioning

confidence: 99%

Spin magnetic susceptibility of ferromagnetic silicene in the presence of Rashba spin-orbit coupling

2017

View full text Add to dashboard Cite

In the current work, the effect of extrinsic Rashba spin-orbit coupling (RSOC) on the electronic band structure (BS) and magnetic susceptibility (MS) of ferromagnetic silicene is investigated in the presence of external perpendicular electric field. The Kane-Mele Hamiltonian and Dirac cone approximation besides the Green’s functions approach have been used to study the MS of the spin-up and spin-down bands. By changing the electric field, energy of the inter-band transitions and MS are tuned. Our findings show that MS could be easily controlled by an external electric field and RSOC. The system shows three phases: Topological insulator (TI), valley-spin polarized metal (VSPM) and band insulator (BI) for various RSOC and electric field strengths. The maximum and minimum value of MS appears in the VSPM and BI regimes, respectively. RSOC leads to the distortion of BS and reduction of the effective mass which in combination with SOC provides some changes like phase transition of VSPM from antiferromagnetic to the paramagnetic phase. Strong RSOC results to the drastic reduction of MS and double peak of the spin-up or spin-down curves at low temperatures.

show abstract

Magnetic tunnel junctions

Cited by 374 publications

References 51 publications

Magnetoresistance in Graphene-Based Ferromagnetic/ Rashba Barrier/Ferromagnetic Heterojunction

Magnetoresistance in Graphene-Based Ferromagnetic/ Rashba Barrier/Ferromagnetic Heterojunction

Carbon Nanotube Based Magnetic Tunnel Junctions (MTJs) for Spintronics Application

Spin magnetic susceptibility of ferromagnetic silicene in the presence of Rashba spin-orbit coupling

Contact Info

Product

Resources

About