Magnetic tunnel junctions with a rock-salt-type Mg1−<i>x</i>Ti<i>x</i>O barrier for low resistance area product

Ikhtiar,; Kasai, S.; Cheng, Puxin; Ohkubo, T.; Takahashi, Y. K.; Furubayashi, T.; Hono, K.

doi:10.1063/1.4953783

Cited by 11 publications

(2 citation statements)

References 25 publications

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“…[24,25] Recently, it was proposed that graphene could serve as a low-resistance tunnel barrier for vertical SV consisting of ferromagnet/graphene/ferromagnet junctions due to its features of single atomic layer thickness, zero-bandgap, and large area growth without pinholes. [24,25] Recently, it was proposed that graphene could serve as a low-resistance tunnel barrier for vertical SV consisting of ferromagnet/graphene/ferromagnet junctions due to its features of single atomic layer thickness, zero-bandgap, and large area growth without pinholes.…”

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confidence: 99%

Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices

Larionov

Попов

et al. 2019

Advanced Materials

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For years graphene has been considered as the most potential material which paves the way to advanced spintronic devices [1][2][3][4][5][6] due to its extraordinary electrical and physical properties. [7][8][9][10] The long spin diffusion length in graphene originated from the weak spin-orbit interaction and high electron mobility have stimulated numerous studies on developing graphene-based lateral spin valve (SV) in the past decade. [11][12][13][14][15][16] Apart from the application to lateral SV dealing with in-plane spin transport in a graphene channel, another potential application that is the implementation of graphene as a spacer material in vertical SV has recently become a subject of intense interest. [17][18][19][20][21][22] In development of vertical SV, the achievement of both the low resistance-area (RA) product and large magnetoresistance (MR) ratio is required for the realization of read heads for ultrahigh-density hard disk drives, [23] and magnetic random access memory [5,6] with high-speed operation and low power consumption. However, the current technology Graphene-based vertical spin valves (SVs) are expected to offer a large magnetoresistance effect without impairing the electrical conductivity, which can pave the way for the next generation of high-speed and low-power-consumption storage and memory technologies. However, the graphene-based vertical SV has failed to prove its competence due to the lack of a graphene/ferromagnet heterostructure, which can provide highly efficient spin transport. Herein, the synthesis and spin-dependent electronic properties of a novel heterostructure consisting of single-layer graphene (SLG) and a half-metallic Co 2 Fe(Ge 0.5 Ga 0.5 ) (CFGG) Heusler alloy ferromagnet are reported. The growth of high-quality SLG with complete coverage by ultrahigh-vacuum chemical vapor deposition on a magnetron-sputtered single-crystalline CFGG thin film is demonstrated. The quasi-free-standing nature of SLG and robust magnetism of CFGG at the SLG/ CFGG interface are revealed through depth-resolved X-ray magnetic circular dichroism spectroscopy. Density functional theory (DFT) calculation results indicate that the inherent electronic properties of SLG and CFGG such as the linear Dirac band and half-metallic band structure are preserved in the vicinity of the interface. These exciting findings suggest that the SLG/CFGG heterostructure possesses distinctive advantages over other reported graphene/ferromagnet heterostructures, for realizing effective transport of highly spin-polarized electrons in graphene-based vertical SV and other advanced spintronic devices.

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confidence: 99%

Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices

Larionov

Попов

et al. 2019

Advanced Materials

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“…In spite of considerable progress in the last decades, ultrathin oxide (MgO and Al 2 O 3 ) spacers − serving as tunnel barriers provided no sufficient magnetoresistance (MR) performances in vertical SVs. , Recently, 2D materials displaying extremely large diversity of electronic and structural properties came under consideration as alternative spacer materials. , Graphene and h-BN − were considered as low-resistance barriers for a vertical SV. Additionally, usage of transition metal dichalcogenides (TMDs) can significantly expand the variety of electronic properties and tune the effectiveness of magnetic junctions. − Introducing TMDs into a magnetic tunnel junction can bring the advantage of adjustable electrical resistance of MTJ which is technically important from the viewpoint of application.…”

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confidence: 99%

Half-Metallic Heusler Alloy/MoS₂ Based Magnetic Tunnel Junction

Larionov

Pereda

et al. 2022

ACS Appl. Mater. Interfaces

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Integration of half-metallic materials and 2D spacers into vertical magnetoresistive spin valves may pave the way for effective low-power consumption storage and memory technologies. Driven by the recent successful growth of graphene/ half-metallic Co 2 Fe(Ge 1/2 Ga 1/2 ) (CFGG) heterostructure, here we report a theoretical investigation of magnetic tunnel junction (MTJ) based on the ferromagnetic CFGG Heusler alloy and the MoS 2 spacer of different thicknesses. Using ab initio approach, we demonstrate that the inherent ferromagnetism of CFGG is preserved at the interface, while its half-metallicity is recovering within few atomic layers. Ballistic transport in CFGG/ MoS 2 /CFGG MTJ is studied within the nonequilibrium Green's function formalism, and a large magnetoresistance value up to ∼10 5 % is observed. These findings support the idea of effective spintronics devices based on half-metallic Heusler alloys and highly diversified transition metal dichalcogenide family.

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Towards Oxide Electronics: a Roadmap

Coll

Fontcuberta

Althammer

et al. 2019

Applied Surface Science

275

145

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Magnetic tunnel junctions with a rock-salt-type Mg1−xTixO barrier for low resistance area product

Cited by 11 publications

References 25 publications

Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices

Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices

Half-Metallic Heusler Alloy/MoS₂ Based Magnetic Tunnel Junction

Towards Oxide Electronics: a Roadmap

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Magnetic tunnel junctions with a rock-salt-type Mg1−xTixO barrier for low resistance area product

Cited by 11 publications

References 25 publications

Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices

Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices

Half-Metallic Heusler Alloy/MoS2 Based Magnetic Tunnel Junction

Towards Oxide Electronics: a Roadmap

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Product

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Half-Metallic Heusler Alloy/MoS₂ Based Magnetic Tunnel Junction