Magnetic tunnel structures: Transport properties controlled by bias, magnetic field, and microwave and optical radiation

Graphene nano-crystalline carbon film/SiO2/p-Si heterostructures were fabricated with SiO2 interlayer thicknesses varying from 0 to 1000 nm, and their in-plane magnetoresistance (MR) was investigated. The results showed that, compared to the 0 nm SiO2 case, the presence of a 5 nm SiO2 interlayer significantly improved the room temperature MR by more than eight times (from 2.5% to 20.9% at 280 K). For SiO2 layers with thicknesses of 50 nm and above, only small negative MR values were observed. For all SiO2 thicknesses, the variations in the mobility of heterostructures were highly consistent with their MR performance. The results of this study provide a practical route to building graphene-based high-performance MR devices suitable for mass production as magnetic sensors and magnetic logic devices.

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Ferromagnetic Silicides and Germanides Epitaxial Films and Multilayered Hybrid Structures: Synthesis, Magnetic and Transport Properties

Tarasov,

Lukyanenko,

Yakovlev

et al. 2023

Bull. Russ. Acad. Sci. Phys.

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Magnetic tunnel structures: Transport properties controlled by bias, magnetic field, and microwave and optical radiation

Cited by 3 publications

References 17 publications

Magnetic anisotropy in Fe films deposited on SiO2/Si(001) and Si(001) substrates

Magnetic anisotropy in Fe films deposited on SiO2/Si(001) and Si(001) substrates

Interlayer-enhanced room temperature in-plane magnetoresistance in graphene nano-crystalline carbon (GNC) film/SiO2/p-Si heterostructures

Ferromagnetic Silicides and Germanides Epitaxial Films and Multilayered Hybrid Structures: Synthesis, Magnetic and Transport Properties

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