Magnetically actuated peel test for thin films

Ostrowicki, Gregory T.; Sitaraman, Suresh K.

doi:10.1016/j.tsf.2012.01.042

Cited by 19 publications

(12 citation statements)

References 8 publications

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“…A Paris Law fit of the delamination rates results in constants C ≈ 3•10 -9 and m ≈ 15, and has good correlation with the experimental data. Monotonic testing results for identical samples as discussed in [18] are also shown and indicate the range of critical loading amplitudes for steady-state peeling.…”

Section: Resultsmentioning

confidence: 86%

“…Test specimen fabrication details are presented elsewhere [18,21] under load and promotes even stretching of the three anchoring peel strips. Visible hash marks which run alongside the peel strips were also incorporated into the mask design, and are a convenient reference to determine the delamination front position through visual inspection.…”

Section: Sample Preparationmentioning

confidence: 99%

“…the released film structure cannot penetrate the substrate), the available range of stress ratios are R ≥ 0. In this work, crack propagation was studied under R = 0 fatigue loading by ensuring the permanent A force calibration was performed under monotonic loading conditions as reported in [18], which resulted in positive repulsive force when the voltage applied to the electromagnet was greater than 2.7 V for a separation gap δ of 1.8 mm. However, a separate force calibration under cyclic voltage loading was not feasibledue to limitations of the described setup.…”

Section: Application Of Cyclic Loadingmentioning

confidence: 99%

“…(2) non-contact actuation, (3) simple batch fabrication with representative films and interfaces, (4) scalable from micron to submicron thick films, (5) ability to conduct interfacial FCP studies under constant stress amplitude loading, and (6) potential ability to conduct peel experiments while enclosing the specimen within a small environmental chamber. The MAPT technique has already been used previously to determine the critical interfacial fracture toughness of thin Cu films on Si substrates under monotonic loading [18]. The focus of this work is therefore to perform an interfacial FCP study using the MAPT technique, which to the authors' knowledge is a first for a peel-type testunder constant stress amplitude loading.…”

Section: Introductionmentioning

confidence: 99%

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Cyclic magnetic actuation technique for thin film interfacial fatigue crack propagation

Ostrowicki

Sitaraman

2016

Engineering Fracture Mechanics

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Interfacial fatigue crack characterization is challenging for as-deposited thin films due to issues with fixturing and precision application of cyclic loading. A fixtureless and microfabricatedtest technique is presented to characterize delamination propagation rate as a function of constant amplitude fatigue loading using a novel peel test configuration and magnetic actuation. The test was demonstrated for 1.6 µm thick Cu films on a Si substrate, where interfacial fatigue crack propagation was observed to follow Paris Law behavior.

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Section: Resultsmentioning

confidence: 86%

Section: Sample Preparationmentioning

confidence: 99%

Section: Application Of Cyclic Loadingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Cyclic magnetic actuation technique for thin film interfacial fatigue crack propagation

Ostrowicki

Sitaraman

2016

Engineering Fracture Mechanics

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“…Apart from these methods non-contact type techniques like the magnetic actuation test for interfacial strength measurement [15] and the stress engineered "superlayer" technique [16], [17] for cohesive strength measurement can be employed. Four-point bend test technique has been used to investigate the adhesive energies of Cu and various low-k materials deposited using different processes.…”

mentioning

confidence: 99%

Study of Chip–Package Interaction Parameters on Interlayer Dielectric Crack Propagation

Raghavan

Schmadlak²,

Leal³

et al. 2014

IEEE Trans. Device Mater. Relib.

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To meet the electrical performance requirements, copper traces with ultralow-k (ULK) interlayer dielectric (ILD) materials are used in today's semiconductor devices. The dielectric constant (k) of these materials is often reduced through the introduction of pores or inclusions, and thus, the ULK ILD materials have low fracture strength. During flip-chip assembly, thermally induced stresses occurring due to the differential displacement between the substrate and the die can result either in ILD cracking or in ILD delamination in the vicinity of solder bump. Such reliability problems are a cause for concern in semiconductor devices. In this paper, we study such dielectric cracking through numerical models and experiments and present methods to reduce such dielectric cracking. This work uses a finite-element-based submodeling approach to study ILD cracking in flip-chip assemblies. The developed "global" model accounts for the die, the passivation layer, the die pad, the solder bump, the substrate pad, and various layers in the substrate, including the trace pattern effective directional modulus. The displacement boundary conditions from the global model under flip-chip assembly cooling are then applied to a "local model," which accounts for the die with its backend-of-line (BEOL) stack details, such as the die pad, the passivation layer, the solder bump, the substrate pad, and layers in the substrate. The local model focuses on the most critical solder bump, based on global stress contours. Next, cohesive cracks are introduced at various locations in the ULK layers above the critical solder bump and are allowed to propagate under flip-chip assembly reflow thermal conditions. It can be seen that the elastic energy available for crack propagation initially increases with crack length, but then starts to decay, indicating that the ILD cracking is often confined in the vicinity of one bump. Furthermore, the results from the models have been compared against experimental failure analysis results of 45-nm (C45) devices. It is also shown that the models can provide geometry and material guidelines to reduce ILD cracking.Index Terms-Back end of line (BEOL) stack reliability, finite-element modeling, flip-chip devices, focused ion beam (FIB), fracture mechanics simulation, lead-free solder reflow, low-k dielectric thin films, microelectronic packaging, porous low-k dielectric, thin film delamination, ultra low-k dielectric cracking.

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Size-Dependent Analysis of Strain Energy Release Rate of Buckling Delamination Based on the Modified Couple Stress Theory

He,

Tang,

Liu

et al. 2024

Acta Mech. Solida Sin.

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Magnetically actuated peel test for thin films

Cited by 19 publications

References 8 publications

Cyclic magnetic actuation technique for thin film interfacial fatigue crack propagation

Cyclic magnetic actuation technique for thin film interfacial fatigue crack propagation

Study of Chip–Package Interaction Parameters on Interlayer Dielectric Crack Propagation

Size-Dependent Analysis of Strain Energy Release Rate of Buckling Delamination Based on the Modified Couple Stress Theory

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Magnetically actuated peel test for thin films

Cited by 19 publications

References 8 publications

Cyclic magnetic actuation technique for thin film interfacial fatigue crack propagation

Cyclic magnetic actuation technique for thin film interfacial fatigue crack propagation

Study of Chip&#x2013;Package Interaction Parameters on Interlayer Dielectric Crack Propagation

Size-Dependent Analysis of Strain Energy Release Rate of Buckling Delamination Based on the Modified Couple Stress Theory

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Product

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Study of Chip–Package Interaction Parameters on Interlayer Dielectric Crack Propagation