Magnetically-coupled current probing structure consisting of TSVs and RDLs in 2.5D and 3D ICs

Kim, Jonghoon J.; Bae, Bumhee; Kim, Sukjin; Kong, Sunkyu; Kim, Heegon; Jung, Daniel; Kim, Joungho

doi:10.1109/3dic.2014.7152151

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…Vertical interconnections enable the number of the I/O contact pads to increase considerably and the systems to communicate large amount of data concurrently. Another advantage is that high speed signal can be communicated successfully in a high speed channel due to reduced length of interconnection [1]. The high speed channel in through-via based 3D or 2.5D IC consists of multistacked through-vias, interposer interconnections, bumps, etc.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of bump-less high speed channel on silicon, organic and glass interposer

Lee

Kim

et al. 2014

2014 IEEE International Symposium on Electromagnetic Compatibility (EMC)

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In this paper, we propose the structure of bumpless high speed channel on interposer in through-via based 2.5D or 3D integrated circuit (IC). Electrical characterization of the proposed structure is analyzed by simulation in the frequencyand time-domain. In order to discuss and analyze the electrical characteristics of the proposed structure in detail, the bump-less channel and the channel with the bump are compared. In addition, the electrical characteristics on interposer are greatly affected by the material properties of the substrate. Therefore, we compared and analyzed the bump-less high speed channel performance on silicon, organic and glass interposer. For obtaining reasonable results, all parameters such as the dimensions of the proposed structure and material properties are decided based on recent or near-future fabrication process. With the simulation results, it is observed that bump-less high speed channel on organic and glass interposer shows better electrical performance compared to silicon interposer.

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Section: Introductionmentioning

confidence: 99%

Electrical characterization of bump-less high speed channel on silicon, organic and glass interposer

Lee

Kim

et al. 2014

2014 IEEE International Symposium on Electromagnetic Compatibility (EMC)

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“…Accordingly, to prevent the current probing activity from severely affecting the intrinsic current path through physical contact, magnetic coupling mechanism is adopted in this paper. Current waveforms are found by capturing the induced magnetic flux with the proposed current probing structure, and then reconstructing the original current waveform using the transfer impedance profile [6]. The proposed current probing structure exhibits several advantages as it does not require any modification and thus does not significantly affect the intrinsic current path.…”

Section: Introductionmentioning

confidence: 99%

TSV-based current probing structure using magnetic coupling in 2.5D and 3D IC

Kim

Jung

Kim

et al. 2015

2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

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Simultaneous switching noise (SSN) is caused by the simultaneous switching of a group of I/O drivers, and isproportional to the total inductance and the rate of change of the switching current. This often leads to signal distortion and degradation of signal and power integrity of systems. Furthermore, with the continuously decreasing operating voltage, susceptibility to SSN keeps on increasing and it becomes increasingly challenging to achieve high performance interfaces. Therefore, it is highly important to perform SSN analysis in order to accurately investigate the noise and timing margin of the devices under test; hence, it is important to know the exact amount of switching current drawn by the ICs. In this paper, we propose TSV-based current probing structure using magnetic coupling, named TSV-based Current Probe (TCP). By capturing the magnetic flux induced by the injected current and processing it through a series of reconstruction steps, we can obtain the original current waveform of interest. Through a series of simulations in frequency and time domains, we verify the performance of the proposed probing structure, TCP. Lastly, TCP is fabricated using TSV fabrication techniques and measured for experimental verification.

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Magnetically-coupled current probing structure consisting of TSVs and RDLs in 2.5D and 3D ICs

Cited by 2 publications

References 3 publications

Electrical characterization of bump-less high speed channel on silicon, organic and glass interposer

Electrical characterization of bump-less high speed channel on silicon, organic and glass interposer

TSV-based current probing structure using magnetic coupling in 2.5D and 3D IC

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