2005
DOI: 10.1016/j.jmmm.2004.09.031
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Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells

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Cited by 20 publications
(4 citation statements)
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References 12 publications
(15 reference statements)
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“…Recently, exchange bias has also been demonstrated to be an effective means for tailoring the magnetization reversal of elliptical dots [12]. Although there have been some reports on room temperature studies of multilayer ring structures consisting of metallic AFM layers such as IrMn or FeMn [13][14][15], to date there has been no work on the magnetic properties of exchange-biased rings incorporating oxide AFM layers such as CoO. Using CoO as the AFM layer is suitable due to its Néel temperature T N = 291 K, which is just below room temperature, thus enabling the exchange bias to be reset conveniently.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, exchange bias has also been demonstrated to be an effective means for tailoring the magnetization reversal of elliptical dots [12]. Although there have been some reports on room temperature studies of multilayer ring structures consisting of metallic AFM layers such as IrMn or FeMn [13][14][15], to date there has been no work on the magnetic properties of exchange-biased rings incorporating oxide AFM layers such as CoO. Using CoO as the AFM layer is suitable due to its Néel temperature T N = 291 K, which is just below room temperature, thus enabling the exchange bias to be reset conveniently.…”
Section: Introductionmentioning
confidence: 99%
“…As a source of unidirectional anisotropy, it has been shown that exchange bias ͑EB͒ can be used to control the reversal mechanisms in patterned nanomagnets. 17 While the majority of work on rings has been concerned with single layer, 16,18 or pseudospin valve structures, [19][20][21] there is limited reported work on EB bilayer rings [22][23][24] especially at low temperatures.…”
mentioning
confidence: 99%
“…The shape and size of a nanosized magnet markedly influence its behavior. 1,2) Because nanosized magnets are promising materials for practical applications, the magnetization reversal processes and domain wall configurations of nanosized magnets have been studied intensively, e.g., for nonvolatile memory devices, 3,4) magnetic storage media, 5) and magnetic logic gates. 6,7) In particular, magnetic nanowires are attractive as nanosized magnets from both fundamental and applied points of view [8][9][10][11] because inducing a magnetic field 10) or current 11) can control their domain wall motion.…”
mentioning
confidence: 99%