Electron and hole transporting layers are considered the key element of the fabrication of a high-performance photovoltaic device. An efficient electron transport layer (ETL) must provide better electrons extraction by minimizing the charge recombination rate. In the current work, we have successfully fabricated a solution-processed titanium dioxide (TiO 2 ) thin film using a simple deposition technique to serve as an effective ETL for photovoltaic applications. The prepared TiO 2 underwent different annealing processes during the deposition process to provide two sets of compact TiO 2 (c-TiO 2 ) thin films. The first set was annealed at a relatively low temperature (125 °C) and labeled as pristine TiO 2 , while the second set underwent an additional annealing process at 500 °C and labeled as post-annealed TiO 2 . The effect of post-annealing treatment on the structural and optoelectronic properties of the TiO 2 layers was studied using FT-IR, XRD, SEM, UV-Vis absorption, and photoluminescence (PL) analysis. The post-annealed TiO 2 thin film showed better crystallinity and larger grain sizes than the pristine TiO 2 . In addition, the optoelectronic investigations showed that the post-annealed TiO 2 had lower band gap energy and higher photocatalytic activity, qualifying it to act as an effective ETL. Finally, the performance of the TiO 2 electron transport layers was tested by fabricating two solar cell devices. It was found that the post-annealed TiO 2 layer exhibits a better device performance than the pristine TiO 2 by approximately a 21% increase in the power conversion efficiency (PCE).