This work reports the synthesis, structure, and thermoelectric
transport properties of the hole-dominated semiconductors with a general
formula Ca10
RECdSb9 (RE = Y, Ce, Nd, Sm, and Lu). These materials feature unexpectedly
high Seebeck coefficients, up to 650 μV/K at 600 K, and electrical
resistivities on the order of 1–1000 mΩ·cm, which
is an indication of a degenerate semiconducting state. For example,
the Seebeck coefficient observed in Ca10NdCdSb9 (309 μV/K at 600 K) is accompanied by low and metallic-like
electrical resistivity (6 mΩ·cm) and a carrier concentration
of n = 4.68 × 1020 cm–3. The calculated power factor PF in Ca10NdCdSb9 is 0.88 μW/cm·K2 at 300
K, and calculations based on the single parabolic band model indicate
that an optimum PF
opt of 1.68 μW/cm·K2 can be achieved at that temperature for a carrier concentration
of n
opt = 6.62 × 1019 cm–3. The estimated thermoelectric figure of merit zT in this material when properly tuned is expected to surpass zT = 1 at 600 K.