Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS₄ Transistors

Abstract

Transistors realized on the 2D antiferromagnetic semiconductor CrPS4 exhibit large magnetoconductance due to magnetic-field-induced changes in the magnetic state. The microscopic mechanism coupling the conductance and magnetic state is not understood. We identify it by analyzing the evolution of the parameters determining the transistor behaviorcarrier mobility and threshold voltagewith temperature and magnetic field. For temperatures T near the Néel temperature T N, the magnetoconductance originates from a mobility increase due to the applied magnetic field that reduces spin fluctuation induced disorder. For T ≪ T N, instead, what changes is the threshold voltage, so that increasing the field at fixed gate voltage increases the density of accumulated electrons. The phenomenon is explained by a conduction band-edge shift correctly predicted by the ab initio calculations. Our results demonstrate that the band structure of CrPS4 depends on its magnetic state and reveal a mechanism for magnetoconductance that had not been identified earlier.

Important Elements of Spin-Exciton and Magnon-Exciton Coupling

“…In contrast, weaker orbital overlap (NiPS 3 ) and large metal–ligand energy differences (CrI 3 ) lead to flat bands in many other 2D magnetic semiconductors , We hypothesize that the spatially delocalized exciton in CrSBr plays a significant role in creating spin-dependent electron delocalization, suggesting that high charge mobilities may be necessary to achieve exciton–magnon coupling. In this regard, the recently studied, CrPS 4 could be a promising magnetic semiconductor with the desired spin-exciton coupling . In short, we infer that CrI 3 and NiPS 3 have large exciton binding energies based on their small exciton size, which leads to a lack of electron and hole hopping.…”

“…In this regard, the recently studied, CrPS 4 could be a promising magnetic semiconductor with the desired spin-exciton coupling. 35 In short, we infer that ■ DIFFERENT SCENARIOS OF SPIN-EXCITON AND…”

Self-Modulated Magnetism in Two-Dimensional Ferromagnet Fe3GeTe2 Induced by Ambient Effects

“…Two-dimensional (2D) magnets with intrinsic ferromagnetism (FM) or antiferromagnetism (AFM) have attracted increasing attention, which provide an ideal platform to explore exotic 2D magnetism , and design functional 2D electronic devices to promote next-generation information technology. , Compared with conventional magnetic materials, 2D magnets have weak van der Waals (vdW) force between interlayers instead of covalent bonds and thus can be conveniently used to fabricate various functionalized heterostructures for modulating their magnetic properties, , exploring novel physical phenomena, − and designing ultrathin devices related with electronics, optoelectronics, and so on. , …”

“…3,4 Compared with conventional magnetic materials, 2D magnets have weak van der Waals (vdW) force between interlayers instead of covalent bonds and thus can be conveniently used to fabricate various functionalized heterostructures for modulating their magnetic properties, 5,6 exploring novel physical phenomena, 7−9 and designing ultrathin devices related with electronics, optoelectronics, and so on. 10,11 Fe 3 GeTe 2 (FGT), as a kind of 2D ferromagnet discovered in recent years, 12,13 is extensively studied due to its metallicity, high Curie temperature (T C ), and large perpendicular magnetic anisotropy (PMA). 14 Furthermore, the magnetic properties of FGT can be tuned by various external means.…”