2012
DOI: 10.1103/physrevb.85.174430
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Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate

Abstract: In order to unravel the magnetism of Co-doped ZnO films, we have performed rigorous experiments on Co-doped ZnO grown on O-polar ZnO (0001) substrates by molecular beam epitaxy. We find that the ZnO:Co with Co composition less than 20% is paramagnetic even at low temperatures, whereas that with Co composition of 20% shows ferromagnetism at room temperature. Although an additional n-type doping with Ga increases the magnitude of magnetization, the origin of the observed ferromagnetism is not carrier induced, as… Show more

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Cited by 57 publications
(31 citation statements)
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“…Practical devices require simultaneous control on spin state and charge of the electrons in semiconductors [2]. Among these semiconductors ZnO lightly doped with transition metals (Mn, Fe, Co, V, and Cr) [3]- [7] have gained much interest due to the presence of room temperature ferromagnetism.…”
Section: Introductionmentioning
confidence: 99%
“…Practical devices require simultaneous control on spin state and charge of the electrons in semiconductors [2]. Among these semiconductors ZnO lightly doped with transition metals (Mn, Fe, Co, V, and Cr) [3]- [7] have gained much interest due to the presence of room temperature ferromagnetism.…”
Section: Introductionmentioning
confidence: 99%
“…Soon after this report, paramagnetic behavior of homogeneous Zn 0.75 Co 0.25 O prepared by PLD on Al 2 O 3 (0001) was also reported [184]. Since then, there have been a large number of reports on Co-doped ZnO prepared by various methods, such as chemical synthesis, chemical vapor transport, solid-state reaction, sputtering, ion implantation, atomic layer deposition, MOCVD, and MBE; some report ferromagnetism at room temperature and others paramagnetism [185][186][187][188][189][190][191][192][193]. There are also reports that suggest that the observed ferromagnetism is related to carrier-induced mechanism [185,186,194,195].…”
Section: Ii-vi-based Magnetic Semiconductorsmentioning
confidence: 99%
“…A prominent example is the investigation of nucleation during the early stages of phase transformations in materials [15][16][17][18][19]. Other popular applications include the onset of segregation of solute ions to defects in materials subject to extreme environments, such as ion/neutron irradiation [20][21][22][23], and the clustering of solute ions in semiconductor devices [24][25][26][27].…”
Section: Defining and Assessing Randomnessmentioning
confidence: 99%