Semimagnetic Semiconductors and Diluted Magnetic Semiconductors 1991
DOI: 10.1007/978-1-4615-3776-2_11
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Magnetism of Fe-Based Diluted Magnetic Semiconductors

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Cited by 4 publications
(4 citation statements)
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“…The calculated magnetization is in quantitative agreement with experimental data for compounds crystallizing in the zinc-blende as well as in the wurzite structure [2]. In the wurzite structure case the crystal field potential contains a trigonal distortion term which reflects C3v symmetry of the nearest neighbourhood of a Fe 2÷ (3d 6) ion [3].…”
supporting
confidence: 77%
“…The calculated magnetization is in quantitative agreement with experimental data for compounds crystallizing in the zinc-blende as well as in the wurzite structure [2]. In the wurzite structure case the crystal field potential contains a trigonal distortion term which reflects C3v symmetry of the nearest neighbourhood of a Fe 2÷ (3d 6) ion [3].…”
supporting
confidence: 77%
“…The dilute magnetic semiconductor (DMS) Hgl_xFexSe is known to reveal numerous interesting physical properties which can be related to either the free electrons or the localised moments of the iron donors [ 1 ]. For high enough doping (x >~ 2.5 x 10 -4 corresponding to an iron concentration c/> 4.5 x 10 ~8 cm -3) the Fermi level is pinned to a Fe 2 ÷ state 220 meV above the conduction band edge.…”
Section: Introductionmentioning
confidence: 99%
“…The high magnetic field magnetization data for diluted magnetic semiconductors (DMS) in which a fraction of cations were substituted by Fe ions [1] are available up to date for Cd1-xFexSe [2], Cd1 -x FexTe [3], Ζn1-xFexSe [4], Hg1-x Fex Se [5]. The studies presented in [5] covered the composition range 0.003 < x <0.05 and mainly dealt with the anisotropy of magnetic interactions.…”
mentioning
confidence: 99%
“…It is characterized by temperature independent susceptibility at low temperatures and a very weak saturation of the magnetization in high magnetic fields. Such description of Fe 2 +(3d6 ) in II-VI compounds with some modifications (additional trigonal distortion) to account for magnetization anisotropy was successfully applied to CdTe, CdSe, ZnSe [1][2][3][4]. The presented magnetization measurements of HgSe:Fe were performed at temperatures from 1.6 K to 40 K in the magnetic fields up to 20 T. The high precision capacitive torsional magnetometer was used to collect the magnetization data continuously (approximately 1000 points per 20 T) during the sweep of the magnet.…”
mentioning
confidence: 99%