Magnetism of Ta dichalcogenide monolayers tuned by strain and hydrogenation

Manchanda, Priyanka; Sharma, Vinit; Yu, Hongbin; Sellmyer, David J.; Skomski, Ralph

doi:10.1063/1.4927286

Cited by 58 publications

(39 citation statements)

References 54 publications

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“…It is also worth mentioning that, although in this review we focused on the tunability of electronic and optical properties, strain-induced effects can be employed also to tune alternative degree of freedoms, as magnetism [165,166] or lattice dynamics [167].…”

Section: Discussionmentioning

confidence: 99%

Strain engineering in semiconducting two-dimensional crystals

Roldán

Castellanos-Gómez

Cappelluti

et al. 2015

J. Phys.: Condens. Matter

466

428

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One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS2, WS2, MoSe2 and WSe2). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc., is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed. Contents

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Section: Discussionmentioning

confidence: 99%

Strain engineering in semiconducting two-dimensional crystals

Roldán

Castellanos-Gómez

Cappelluti

et al. 2015

J. Phys.: Condens. Matter

466

428

View full text Add to dashboard Cite

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“…To facilitate the potential applications of these materials in spintronics devices, it is essential to induce magnetism in these materials. Numerous first‐principles calculations have been carried out to investigate the magnetic properties of TMDs . Using DFT‐based first‐principles calculations, Zheng et al investigated the magnetism of monolayer MoS 2 due to various types of vacancies and effect of strain.…”

Section: Spin Generationmentioning

confidence: 99%

Prospects of spintronics based on 2D materials

Feng

Shen

Yang

et al. 2017

WIREs Comput Mol Sci

197

135

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Spintronics holds the promise for future information technologies. Devices based on manipulation of spin are most likely to replace the current silicon complementary metal‐oxide semiconductor devices that are based on manipulation of charge. The challenge is to identify or design materials that can be used to generate, detect, and manipulate spin. Since the successful isolation of graphene and other two‐dimensional (2D) materials, there has been a strong focus on spintronics based on 2D materials due to their attractive properties, and much progress has been made, both theoretically and experimentally. Here, we summarize recent developments in spintronics based on 2D materials. We focus mainly on materials of truly 2D nature, that is, atomic crystal layers such as graphene, phosphorene, monolayer transition metal dichalcogenides, and others, but also highlight current research foci in heterostructures or interfaces. In particular, we emphasize roles played by computation based on first‐principles methods which has contributed significantly in the designs of spintronic materials and devices. We also highlight challenges and suggest possible directions for further studies. WIREs Comput Mol Sci 2017, 7:e1313. doi: 10.1002/wcms.1313 This article is categorized under: Structure and Mechanism > Computational Materials Science Electronic Structure Theory > Ab Initio Electronic Structure Methods Electronic Structure Theory > Density Functional Theory

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“…However, neither graphene nor most of the TMDs monolayers is intrinsically magnetic. Many methods can be used to induce the magnetic properties in the TMDs monolayers, mainly including doping, [7][8][9][10] hydrogenation, [11][12][13][14] and forming zigzag edges. 15,16 In the nanoelectronic applications, however, we expect the magnetism can be precisely and flexibly controlled.…”

Section: Introductionmentioning

confidence: 99%

Strain-controlled switch between ferromagnetism and antiferromagnetism in1T−CrX2(X=Se, Te) monolayers

Shao

et al. 2015

Phys. Rev. B

157

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We report on the strain-induced switch between ferromagnetic (FM) and antiferromagnetic (AFM) orderings in 1T -CrX2 (X = Se, Te) monolayers based on the first-principles calculations. The CrSe2 and CrTe2 monolayers without strains are found to be AFM and FM, respectively. Under the biaxial tensile strain, the CrSe2 monolayer tends to be FM when the strain is larger than 2%. The FM state is further stabilized when the strain is increased. Moreover, the CrSe2 monolayer changes to be halfmetallic when the tensile strain is larger than 10%. While for the CrTe2 monolayer, the critical strain at which the transition between the FM and AFM states occurs is compressive, of −1%. Relatively small tensile strains of 4% and 2%, respectively, can enhance the Curie temperature of CrSe2 and CrTe2 monolayers above the room temperature. The strain-induced switch between the FM and AFM states in CrSe2 (CrTe2) monolayer can be understood by the competition between the AFM Cr-Cr direct exchange interaction and FM Cr-Se(Te)-Cr superexchange interaction. The tunable and attractive magnetic and electronic properties controlled by the flexible strain are desirable for the future nanoelectronic applications.

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Magnetism of Ta dichalcogenide monolayers tuned by strain and hydrogenation

Cited by 58 publications

References 54 publications

Strain engineering in semiconducting two-dimensional crystals

Strain engineering in semiconducting two-dimensional crystals

Prospects of spintronics based on 2D materials

Strain-controlled switch between ferromagnetism and antiferromagnetism in1T−CrX2(X=Se, Te) monolayers

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