Magnetism of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>Fe</mml:mi><mml:mi>/</mml:mi><mml:mi>ZnSe</mml:mi><mml:mo>(</mml:mo><mml:mn>001</mml:mn><mml:mo>)</mml:mo></mml:math>Interface

Marangolo, M.; Gustavsson, Fredrik; Eddrief, M.; Sainctavit, Philippe; Etgens, V. H.; Cros, Vincent; Pétroff, F.; George, J. M.; Benčok, P.; Brookes, N. B.

doi:10.1103/physrevlett.88.217202

Cited by 48 publications

(45 citation statements)

References 30 publications

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“…Magnetic properties of thin films on semiconductor surfaces have attracted attention recently, thanks to their potential use as spin-memories and spin-transistors [1]. The usefulness of these thin films for device applications depends largely on chemical reactions and ordering at the interface that may destroy/alter the magnetic properties.…”

Section: Introductionmentioning

confidence: 99%

Chemical reaction and interface formation on InAs(111)–Co surfaces

et al. 2005

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Section: Introductionmentioning

confidence: 99%

Chemical reaction and interface formation on InAs(111)–Co surfaces

et al. 2005

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“…The lattice constant over which the FM state becomes stable is close to that of FM bcc Fe, 2.87Å, which has been grown on GaAs [28,29] and ZnSe [30,31] substrates due to the good lattice match between them. Therefore, it can also raise the possibility of growing CsCl-type FeSe on GaAs or ZnSe, because the calculated lattice parameter of FeSe is very close to that of GaAs (a AFM ∼ = a GaAs /2).…”

Section: Mechanical Stabilitymentioning

confidence: 99%

First-principles prediction of spin-density-reflection symmetry driven magnetic transition of CsCl-type FeSe

Rahman¹,

Kim²,

Freeman³

2010

Journal of Magnetism and Magnetic Materials

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Based on results of density functional theory (DFT) calculations with the local spin density approximation (LSDA) and the generalized gradient approximation (GGA), we propose a new magnetic material, CsCl-type FeSe. The calculations reveal the existence of ferromagnetic (FM) and antiferromagnetic (AFM) states over a wide range of lattice constants. At 3.12Å in the GGA, the equilibrium state is found to be AFM with a local Fe magnetic moment of ±2.69 µ B . A metastable FM state with Fe and Se local magnetic moments of 2.00 µ B and −0.032 µ B , respectively, lies 171.7 meV above the AFM state. Its equilibrium lattice constant is ∼ 2 % smaller than that of the AFM state, implying that when the system undergoes a phase transition from the AFM state to the FM one, the transition is accompanied by volume contraction. Such an AFM-FM transition is attributed to spin-density z-reflection symmetry; the symmetry driven AFM-FM transition is not altered by spin-orbit coupling. The relative stability of different magnetic phases is discussed in terms of the local density of states. We find that CsCl-type FeSe is mechanically stable, but the magnetic states are expected to be brittle.

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“…MTJs with iron FM layer and ZnSe barriers are the strongest candidates for TMR studies and applications due to several advantageous conditions: favorable matching of Fe and ZnSe lattices [8], stable chemistry and magnetism at the interface [9], coherent spin lifetime as long as a fraction of a microsecond in n-type undoped ZnSe [10], electronic pinning of the FeFermi level position at 1.6 eV above the valence-band maximum with a corresponding Schottky-barrier height of 1.1 eV [11], and a carrier concentration dominated by electrons…”

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confidence: 99%

Resonant tunnel magnetoresistance in epitaxial metal-semiconductor heterostructures

et al. 2005

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We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar junctions have shown that positive, negative or even its sign-reversible magnetoresistance can be obtained, depending on the bias voltage, the energy of localized states in the ZnSe barrier and spatial symmetry.The averaging of conduction over all localized states in a junction under resonant condition is strongly detrimental to the magnetoresistance.

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Magnetism of theFe/ZnSe(001)Interface

Cited by 48 publications

References 30 publications

Chemical reaction and interface formation on InAs(111)–Co surfaces

Chemical reaction and interface formation on InAs(111)–Co surfaces

First-principles prediction of spin-density-reflection symmetry driven magnetic transition of CsCl-type FeSe

Resonant tunnel magnetoresistance in epitaxial metal-semiconductor heterostructures

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