Magnetization behavior of NiMnGa alloy nanowires prepared by DC electrodeposition

Javed, Khalid; Zhang, X.M.; Parajuli, Saroj; Ali, Syed Shahbaz; Ahmad, Naeem; Shah, Saqlain A.; Irfan, Muhammad; Feng, J. F.; Han, Xiufeng

doi:10.1016/j.jmmm.2019.166232

Cited by 19 publications

(12 citation statements)

References 43 publications

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“…Various Heusler's micro‐ and nanowire production methods differ by the size, length, or amount of produced wires. [ 94–103 ]…”

Section: Introductionmentioning

confidence: 99%

“…One of the most suitable Heusler alloy nanowires' preparation technique employs anodized aluminum oxide (AAO) membrane as an electrodeposition template. [97,[124][125][126][127][128][129][130] The disadvantage of this method amounts to the optimization of the electrodeposition conditions, which may be time-consuming. In contrast, the prepared nanowires have a homogeneously distributed behavior and exhibit a uniform morphology.…”

mentioning

confidence: 99%

“…[94] Various Heusler's micro-and nanowire production methods differ by the size, length, or amount of produced wires. [94][95][96][97][98][99][100][101][102][103] In-rotating-water technique allows the production of relatively long, rapidly quenched microwires. [104,105] The most significant disadvantages of the mentioned approach consist in the complicated control of microwire dimensions, and its mechanical properties are not suitable for technical application.…”

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confidence: 99%

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Heusler‐Based Cylindrical Micro‐ and Nanowires

Hennel

Varga

Frolova

et al. 2022

Physica Status Solidi (a)

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Heusler alloys present a large group of binary, [1][2][3][4][5] ternary, [6][7][8][9][10] or quaternary [11][12][13][14] compounds with a wide variety of physical properties. [15][16][17][18] Thanks to their extensive tunability [19][20][21][22] based on their chemical composition, crystal, or electronic structure, [23][24][25][26][27][28][29] they attract interest in the fundamental and application approach. [30][31][32][33][34] Particularly, spin polarization, [33,35] superconductivity, [36][37][38][39] shape memory, [40][41][42][43][44][45] or magnetocaloric behavior [28,40,[46][47][48][49][50] have triggered significant interest in the experimental and theoretical perspective.Based on the chemical composition and the resulting properties, Heusler alloys, also known as full-Heusler alloys with the stoichiometry X 2 YZ, can be divided into several groups according to their physical properties. [51] Co 2 YZ-based Heusler can be considered the leading group of materials showing high spin polarization (P) or even half metallicity (P ¼ 100%). [52][53][54][55][56][57] However, theoretical and experimental studies point to the high sensitivity of spin polarization on the structural disorder. [58] Here, the L2 1 crystalline phase exhibits the highest structural ordering, essential for achieving the required spin polarization values. [59] In contrast, while the mutual exchange of the atoms on the Y-Z position (B2 disorder) has a low influence on the spin polarization values, the X-Y or X-Y-Z disorders (D0 3 or A2, respectively) may significantly decrease spin polarization values. [55,60,61] The presented disadvantage can be solved by a suitable chemical composition or a proper method of preparation of Heusler alloys. [62,63] Stoichiometric and off-stoichiometric Ni-Mn-Z- [64][65][66] and Ni-Fe-Z-based Heusler alloys [67][68][69] are well-known magnetocaloric, shape memory, or even magnetic shape memory materials. [70,71] The mentioned Heusler alloys undergo a structural transformation from a low-temperature martensitic phase to a high-temperature austenitic phase, [51,[64][65][66][72][73][74] which may significantly influence the magnetic entropy change ΔS M and the intensity of the magnetocaloric effect. [75,76] Additionally, Heusler alloys consist of cheap elements like Ni, Fe, Mn, Co, Ga, and In, and thus may be considered low-cost counterparts for typical magnetocaloric material based on Gd, Rh, or other rare-earth elements. [77][78][79][80][81] Another advantage of the Ni-Mn-Zand Ni-Fe-Z-based Heusler alloys consists in the tunability of their structural and magnetic properties. Depending on the

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“…Various Heusler's micro‐ and nanowire production methods differ by the size, length, or amount of produced wires. [ 94–103 ]…”

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Heusler‐Based Cylindrical Micro‐ and Nanowires

Hennel

Varga

Frolova

et al. 2022

Physica Status Solidi (a)

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“…TB movement is inhibited significantly by the grain boundaries in polycrystalline materials; thus, researchers have also applied annealing for grain growth [5], [6], [7], compression [3], [8], and matching the grain and sample size [9] to enable high MFIS in polycrystalline Ni-Mn-Ga. Recently, MSM materials have been developed in the forms of single crystals, polycrystals, and nanowires [10], [11], [12], [13] by using Bridgman vertical growth, additive manufacturing [14], [15], and electrodeposition. Increasingly more applications in robotics, biomedical, and optics use the Ni-Mn-Ga based MSM alloys such as fast actuators [16], [17], micropumps [18], and vibration energy harvesters [19].…”

Section: Introductionmentioning

confidence: 99%

Dissolution of Nickel-Manganese-Gallium Alloys: the first step for manufacturing hybrid micro-devices composed of Ni-Mn-Ga and Silicon layers

Hu¹,

Ullakko²

2022

Preprint

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<p>Our aim is to develop next generation of MEMS (microelectromechanical systems) devices that are composed Ni-Mn-Ga and silicon layers. Due to the large magnetic-field-induced strains of Ni-Mn-Ga, actuating components can be fabricated in the Ni-Mn-Ga layers. Other functional components can be manufactured in the silicon layer. Single crystalline Ni-Mn-Ga alloys that are grown by using the Bridgman vertical growth technique have thus far obtained the largest magnetic field-induced strain (MFIS), a magnetic shape memory (MSM) effect. Similar to silicon wafers, Ni-Mn-Ga wafers are also sliced from crystal-oriented single crystalline ingots. To fabricate hybrid MEMS devices such as micromanipulators and robots, lab-on-chip containing micropump manifolds and valves, or vibration energy harvesters, the fabrication processes used for MEMS devices will be used are also be used to fabricate components in the Ni-Mn-Ga layer of the hybrid MEMS devices. One of the most important processes for MEMS fabrication is the structuring of materials by chemical etching. The main goal of this study is to obtain evidence that the etchant etches silicon but not Ni-Mn-Ga and to identify an etchant that etches Ni-Mn-Ga but not silicon. The present paper reports on a novel experiment in dissolving Ni-Mn-Ga alloys. An etchant composition of 69% HNO3, 98% H2SO4, and CuSO4•5H2O is proposed for dissolving Ni-Mn?Ga alloys and the variation in the dissolution rate by adjusting the concentrations of HNO3 and ultrapure water (UPW) is demonstrated. This etchant was demonstrated to etch Ni-Mn-Ga but not silicon. The HF+HNO3 acidic solution commonly used for etching silicon does not dissolve Ni-Mn-Ga</p>

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“…TB movement is inhibited significantly by grain boundaries in polycrystalline materials so that researchers also applied annealing for grain growth [5][6][7], compression [3,8], matching grain and sample size [9] to enable large MFIS in polycrystalline Ni-Mn-Ga. Recently, MSM materials have been developed in the forms of single crystals, polycrystals, and nanowires [10][11][12][13] by using Bridgman vertical growth, additive manufacturing [14,15], and electrodeposition. Increasingly more applications in robotics, biomedical, and optics use the Ni-Mn-Ga based MSM alloys such as fast actuator [16,17], micropump [18], and vibration energy harvester [19].…”

Section: Introductionmentioning

confidence: 99%

Dissolution of Nickel-Manganese-Gallium Alloys: the first step for manufacturing hybrid micro-devices composed of Ni-Mn-Ga and Silicon layers

Hu¹,

Ullakko²

2022

Preprint

View full text Add to dashboard Cite

<p>Our aim is to develop next generation of MEMS (microelectromechanical systems) devices that are composed Ni-Mn-Ga and silicon layers. Due to large magnetic-field-induced strains of Ni-MnGa, actuating components can be fabricated in the Ni-Mn-Ga layers. Other functional components can be manufactured in silicon layer. Single crystalline Ni-Mn-Ga alloys that are grown by using the Bridgman vertical growth technique obtained so far the largest Magnetic Field Induced Strain (MFIS), a Magnetic Shape Memory (MSM) effect. Like silicon wafers, Ni-Mn-Ga wafers are also sliced from crystal-oriented single crystalline ingots. For fabricating hybrid MEMS devices such as micromanipulators and robots, lab-on-chip containing micro-pump manifolds and valves, or vibration energy harvesters, the fabrication processes used for MEMS devices will be used also for fabricating components in the NiMn-Ga layer of the hybrid MEMS devices. One of the most important processes for MEMS fabrication is the structuring of materials by chemical etching. Main goal of this study is to prove the etchant that etches silicon but not Ni-Mn-Ga and to find an etchant that etches Ni-Mn-Ga but not silicon. The present paper reports on a novel experiment about dissolving Ni-Mn-Ga alloys. An etchant composition of 69% HN𝑂3, 98% 𝐻2𝑆𝑂4, and CuSO4 • 5H2O is proposed for dissolving NiMn-Ga alloys and the variation of the dissolution rate by adjusting the concentrations of HNO3 and ultrapure water (UPW) is demonstrated. This etchant was demonstrated to etch Ni-Mn-Ga but not silicon. An HF + HNO3 acid solution commonly used for etching silicon does not dissolve Ni-MnGa.</p>

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Magnetization behavior of NiMnGa alloy nanowires prepared by DC electrodeposition

Cited by 19 publications

References 43 publications

Heusler‐Based Cylindrical Micro‐ and Nanowires

Heusler‐Based Cylindrical Micro‐ and Nanowires

Dissolution of Nickel-Manganese-Gallium Alloys: the first step for manufacturing hybrid micro-devices composed of Ni-Mn-Ga and Silicon layers

Dissolution of Nickel-Manganese-Gallium Alloys: the first step for manufacturing hybrid micro-devices composed of Ni-Mn-Ga and Silicon layers

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