Magnetization canting in epitaxial Cu/Ni/Cu/Si(001) films

Abstract

The magnetic anisotropy of epitaxial Cu(50 Å)/Ni(tNi/Cu(2000 Å)/Si(001) films as a function of the nickel film thickness (30 Å⩽tNi⩽150 Å) has been studied using a torque magnetometer. It is found that the magnetization rotates continuously from out-of-plane to in-plane as the nickel film thickness increases. For the 150 Å film, the magnetization cants at 42° with respect to the film normal. The canting state is possible because K4eff is positive. The magnitude of K4eff (≈105 ergs/cm3) is an order of magnitude greater than the corresponding magnetocrystalline anisotropy constant of nickel. The origin of the fourth-order anisotropy in these films is believed to be magnetoelastic in nature.

Magnetoelastic coupling induced magnetic anisotropy in Co2(Fe/Mn)Si thin films

“…Such linear relation has been predicted for a cubic system under biaxial strain and experimentally verified for Cu-Ni systems. 38 Similar to the case for K 1 , we observe a substantial contribution to K 2 coming from magnetocrystalline origin in addition to the magnetoelastic couplings.…”

“…However, the fourth order anisotropy term introduces the canting states ofM allowing a gradual transition between the in-plane and out-of-plane states. 23,38 Figure 4 shows the general single-domain magnetic phase diagram for a system with free energy given by Eq. (1) in zero magnetic field assuming a coherent rotation of magnetization.…”

Structural, electrical and magnetic properties of evaporated Ni/Cu and Ni/glass thin films

“…A lot of studies have been devoted to the physical properties of Ni thin films grown on different substrates. Several interesting features have been reported on the Ni/Cu system [2][3][4][5][6][7][8][9][10][11][12]. Ha and O'Handley, using X-ray diffraction (XRD), investigate the strain in Ni/Cu [2].…”

Magnetic Properties of Evaporated Ni Thin Films: Effect of Substrates, Thickness, and Cu Underlayer

“…The AHE phenomenon has been studied in magnetron-sputtered polycrystalline Ni thin film on oxidized Si substrate as a function of Ni thickness (4 to 200 nm) [1] and also in a 10-nm-thick RF sputtered Ni film [2] where the authors correlate the behavior of the Hall resistance and the extraordinary Hall coefficient with the film thickness and morphology. The other interesting feature observed in Ni films is the transition of the magnetization easy axis from in-plane to out-of-plane as a function Ni thickness [3] ; this was observed in Ni/Cu and was attributed to a stress-induced anisotropy. Ni films were studied not only as a single film but also as part of a structure.…”

“…This fact may indicate that the increase of the saturation field arises from a stress-induced anisotropy in Ni/Cu/substrates; Ni deposited on Cu has been found to develop a magnetic anisotropy due to magneto-elastic effects. [3] IV. CONCLUSIONS…”