Magnetization-direction-dependent inverse spin Hall effect observed in IrMn/NiFe/Cu/YIG multilayer structure

Hao, Runrun; Zang, R.; Zhou, Tingyu; Kang, Shishou; Shen, Yan; Liu, Guolei; Han, Guangbing; Yu, Shuyun; Mei, Liangmo

doi:10.1088/1674-1056/28/3/037202

Cited by 7 publications

(6 citation statements)

References 29 publications

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“…It has been shown that among various CuAu-I type AFMs, IrMn is one of the potential candidate for ISHE studies. Most of the ISHE works on IrMn have been performed with crystalline FM materials like NiFe (Py) [15][16][17]. There have been very few reports of spin pumping with CoFeB/IrMn bilayers [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Roy¹,

Mishra²,

Gupta³

et al. 2021

J. Phys. D: Appl. Phys.

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High spin to charge conversion efficiency is a requirement for spintronic devices, which are governed by spin pumping and the inverse spin Hall effect (ISHE). In the last decade, ISHE and spin pumping have been heavily investigated in ferromagnet/heavy metal (HM) heterostructures. Recently, antiferromagnetic (AFM) materials have been found to be a good replacement for HMs because AFMs exhibit terahertz spin dynamics, high spin-orbit coupling, and absence of the stray field. In this context, we have performed the ISHE in CoFeB/IrMn heterostructures. Spin pumping studies are carried out for Co 40 Fe 40 B 20 (12 nm)/Cu(3 nm)/ Ir 50 Mn 50 (t nm)/AlO x (3 nm) samples where t value varies from 0 to 10 nm. Damping in all the samples is higher than in the single layer CoFeB which indicates that spin pumping due to IrMn is the underneath mechanism. Further, the spin pumping in the samples is confirmed by angle dependent ISHE measurements. We have also disentangled other spin rectifications effects and found that the spin pumping is dominant in all the samples. From the ISHE analysis the real part of spin mixing conductance (g ↑↓ r ) is found to be 0.704 ± 0.003 × 10 18 m −2 .

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Section: Introductionmentioning

confidence: 99%

Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Roy¹,

Mishra²,

Gupta³

et al. 2021

J. Phys. D: Appl. Phys.

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“…IrMn exhibits high θ SH within the CuAu-I AFMs. Most of the ISHE works on IrMn have been performed with crystalline FM materials like Py [15][16][17]. There are very few reports of spin pumping with CoFeB/IrMn bilayers [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Roy,

Mishra,

Gupta

et al. 2021

Preprint

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The spin current based electronics, known as spintronics, is the promising technology to replace the charge current based technology. Spintronics based devices allow miniaturization of the device and faster response. The study of spin current efficiency in different materials is one of the emergent research topics in modern days. Spin pumping and inverse spin Hall effect (ISHE) are popular tools to study the spin to charge current conversion efficiency in the materials. In last one decade, ISHE and spin pumping are heavily investigated in ferromagnet (FM)/ heavy metal (HM) heterostructures. Recently the antiferromagnetic (AFM) materials are found to be a good replacement of heavy metals (HM) for these kind of studies. Faster dynamics, exhibiting very high spin-orbit coupling, absence of stray field, efficient propagation of spin current make AFM to be a good replacement of HMs. Understanding the role of different FM layers in a FM/AFM heterostructure for ISHE or spin pumping study is very important for spin to charge conversion physics. In this context we have performed the ISHE in CoFeB/ IrMn heterostructures. Spin pumping study is carried out for Co60F e20B20(12nm)/Cu(3nm)/Ir50M n50(tnm)/AlOx(3nm) samples where t value varies from 0 to 10 nm. The Cu(3 nm) buffer layer is used which is less than the spin diffusion length(∼8 nm) of Cu to improve the IrMn growth. The 3 nm Cu layer allows the unperturbed spin current propagation in the heterostructures. Damping of all the samples is higher than the single layer CoFeB which indicates that the spin pumping is due to the presence of IrMn. Further the spin pumping in the samples are confirmed by ISHE measurement. The real part of spin mixing conductance (g ↑↓ r ) = 0.704 ± 0.01 × 10 18 m −2 is found to be maximum in IrMn(2 nm) sample from the ISHE analysis. The large Spin Hall angle was also found to be ∼ 0.30 for all the samples.

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“…The ability of controlling transport behavior of electron spin provides a significant way to develop highperformance electronic components. [27][28][29][30][31][32][33][34] Naturally, electron spin can also be utilized in designing molecular logic gates. Specifically, input/output signals of a logic gate can be carried by electron spin (i.e., spin-up and spin-down).…”

Section: Introductionmentioning

confidence: 99%

Theoretical design of single-molecule NOR and XNOR logic gates by using transition metal dibenzotetraaza[14]annulenes*

Wang¹,

Tang²,

Dong³

et al. 2020

Chinese Phys. B

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The idea of replacing traditional silicon-based electronic components with the ones assembled by organic molecules to further scale down the electric circuits has been attracting extensive research focuses. Among the molecularly assembled components, the design of molecular logic gates with simple structure and high Boolean computing speed remains a great challenge. Here, by using the state-of-the-art nonequilibrium Green’s function theory in conjugation with first-principles method, the spin transport properties of single-molecule junctions comprised of two serially connected transition metal dibenzotetraaza[14]annulenes (TM(DBTAA), TM = Fe, Co) sandwiched between two single-walled carbon nanotube electrodes are theoretically investigated. The numerical results show a close dependence of the spin-resolved current-voltage characteristics on spin configurations between the left and right molecular kernels and the kind of TM atom in TM(DBTAA) molecule. By taking advantage of spin degree of freedom of electrons, NOR or XNOR Boolean logic gates can be realized in Fe(DBTAA) and Co(DBTAA) junctions depending on the definitions of input and output signals. This work proposes a new kind of molecular logic gates and hence is helpful for further miniaturization of the electric circuits.

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Magnetization-direction-dependent inverse spin Hall effect observed in IrMn/NiFe/Cu/YIG multilayer structure

Cited by 7 publications

References 29 publications

Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Theoretical design of single-molecule NOR and XNOR logic gates by using transition metal dibenzotetraaza[14]annulenes*

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