We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew-scattering of carriers by disorder near the crossover to localization. Although it has been known for almost as long as the Hall effect itself, the AHE in ferromagnetic materials remains the subject of contemporary debate and has gained renewed interest due to its close theoretical connection to the recently discovered spin-Hall effect and to spin transport in general [5,6,7,8,9,10]. Since this AHE often persists above the ferromagnetic Curie temperature, an analogous AHE should be observable in a purely paramagnetic system, in which the charge carriers are spin polarized by an external magnetic field [9]. Unlike ferromagnetic metals whose spin polarization is fixed by their chemistry [11], paramagnetic semiconductors present the additional advantage that their magnetic properties can be smoothly tuned by varying carrier density, magnetic field, or temperature in a given sample. This provides an ideal opportunity to clarify the mechanisms of the AHE. Unfortunately, previous studies in narrow gap semiconductors (e.g. n-InSb) revealed only a very weak AHE, despite large g-factors and strong spin-orbit coupling [9], conditions which should favor observing the AHE. Diluted magnetic semiconductors (DMS) have shown a clear AHE, but only in samples that exhibit hole-mediated ferromagnetism [12], with limited opportunity for tuning with an electric field [13]. Bulk crystals of n-type DMS are not ferromagnetic and, despite their extremely large spin splitting, have exhibited no AHE in previous studies [14].Here, we report the observation of a robust and tunable AHE in a purely paramagnetic two-dimensional electron gas in a DMS quantum well. Surprisingly, the effect is much larger than in earlier studies of paramagnetic semiconductors, despite the presence of a large bandgap and-hence-a weak spin-orbit coupling. We show that the strength of the AHE is electrically tunable in this system, shedding new light on the origins of this class of phenomena and suggesting the possibility of gate-tunable spin transport in similar structures. Finally, we identify a remarkably simple dependence of our AHE on classical scattering in the regime of localization.We have chosen to study the AHE in magneticallydoped two-dimensional electron gases (M2DEGs) [15,16] derived from a II-VI DMS [17]. This choice is dictated by several factors: (a) the carriers have an unusually large paramagnetic susceptibility, resulting in a significant spin polarization that enhances the strength of the AHE; (b) the 2D nature and moderately high mob...