The effects of voltage bias on magnetic hysteresis in single Ni particles 2-3nm in diameter are measured between temperatures of 60mK and 4.2K, using sequential electron tunneling through the particle. While some Ni particles do not display magnetic hysteresis in tunneling current versus magnetic field, in the Ni particles that display hysteresis, the effect of bias voltage on magnetic switching field is nonlinear. The magnetic switching field changes weakly in voltage interval ∼1mV above the tunneling onset voltage, and rapidly decreases versus voltage above that interval. A voltage-driven mechanism explaining this nonlinear suppression of magnetic hysteresis is presented, where the key effect is a magnetization blockade due to the addition of spin-orbit anisotropy ǫ so to the particle by a single electron. A necessary condition for the particle to exhibit magnetization blockade is that ǫ so increases when the magnetization is slightly displaced from the easy axis. In that case, an electron will be energetically unable to access the particle if the magnetization is sufficiently displaced from the easy axis, which leads to a voltage interval where magnetic hysteresis is possible that is comparable to ǫ so /e, where e is the electronic charge. If ǫ so decreases vs magnetization displacement from the easy axis, there is no magnetization blockade and no hysteresis.