Magnetization reversal in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mo>,</mml:mo><mml:mi mathvariant="normal">Mn</mml:mi><mml:mo>)</mml:mo></mml:mrow><mml:mi mathvariant="normal">As</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Mn</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow></mml:math>exchange-biased structures: Investigation by planar Hall effect

Ge, Z.; Lim, W. L.; Shen, S. C.; Zhou, Y. Y.; Liu, X.; Furdyna, J. K.; Dobrowolska, M.

doi:10.1103/physrevb.75.014407

Cited by 33 publications

(14 citation statements)

References 50 publications

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“…The planar Hall effect (PHE) -the appearance of an in-plane transverse voltage in the presence of coplanar electric and magnetic fields -is a magnetotransport phenomenon occurring in strongly spinorbit coupled materials that display a sizable anisotropy in the longitudinal magnetoconductance. It has been shown to arise in thin films of ferromagnetic semiconductors [1][2][3] and two-dimensional electron gases formed at perovskite oxide interfaces [4]. The recent discovery of Weyl semimetals [5][6][7][8][9][10][11][12][13][14] has attracted great interest in the PHE [15,16].…”

Section: Introduction -mentioning

confidence: 99%

Anomalous planar Hall effect in two-dimensional trigonal crystals

Battilomo

Scopigno

Ortix

2021

Phys. Rev. Research

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It is well known that the planar Hall effect (PHE) is deeply intertwined with the anisotropic magnetoresistance (AMR) characterizing strongly spin-orbit coupled materials. The amplitude of the PHE is indeed precisely set by the AMR magnitude, and vanishes when the driving electric field is aligned with the external magnetic field. Here we demonstrate that two-dimensional trigonal crystals with strong spin-orbit coupling can display a PHE of a completely different nature. This effect has a quantum origin arising from the Berry curvature of the Bloch states, and survives even when the applied current is aligned with the planar magnetic field. Moreover when the electric and magnetic fields are aligned perpendicular to a mirror line of the crystal, the PHE can occur as a second-order response at both zero and twice the frequency of the applied electric field. We demonstrate that this non-linear PHE possesses a quantum part that originates from a Zeemaninduced Berry curvature dipole.

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Section: Introduction -mentioning

confidence: 99%

Anomalous planar Hall effect in two-dimensional trigonal crystals

Battilomo

Scopigno

Ortix

2021

Phys. Rev. Research

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“…The planar Hall conductivity (PHC) is defined as the transverse conductivity measured along , in a direction perpendicular to the applied electric field and current along , in the presence of a magnetic field in the x − y plane making an angle θ with the x axis. This effect is known to occur in ferromagnetic systems 33 – 37 where its origin is non-trivial spin topology. Interestingly, it has also been observed recently in the surface states of a topological insulator where it has been linked to magnetic field induced anisotropic lifting of the protection of the surface states from backscattering 38 .…”

Section: Introductionmentioning

confidence: 99%

Berry phase theory of planar Hall effect in topological insulators

Nandy¹,

Taraphder²,

Tewari³

2018

Sci Rep

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The appearance of negative longitudinal magnetoresistance (LMR) in topological semimetals such as Weyl and Dirac semimetals is understood as an effect of chiral anomaly, whereas such an anomaly is not well-defined in topological insulators. Nevertheless, it has been shown recently in both theory and experiments that nontrivial Berry phase effects can give rise to negative LMR in topological insulators even in the absence of chiral anomaly. In this paper, we present a quasi-classical theory of another intriguing phenomenon in topological insulators – also ascribed to chiral anomaly in Weyl and Dirac semimetals– the so-called planar Hall effect (PHE). PHE implies the appearance of a transverse voltage in the plane of applied non-parallel electric and magnetic fields, in a configuration in which the conventional Hall effect vanishes. Starting from Boltzmann transport equations we derive the expressions for PHE and LMR in topological insulators in the bulk conduction limit, and show the important role played by orbital magnetic moment. Our theoretical results for magnetoconductance with non-parallel electric and magnetic fields predict detailed experimental signatures in topological insulators – specifically of planar Hall effect – that can be observed in experiments.

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“…Although these features are commonly observed in PHE measurements on GaMnAs films, they have not been discussed in the literature. 11,15,[17][18][19] In this paper we focus on these two phenomena. Specifically, we show that the above effects observed in PHR during magnetization reorientation can be understood by analyzing the magnetic free energy and magnetic domain structure when the concept of nucleation and propagation of the domains is included in the analysis.…”

Section: Introductionmentioning

confidence: 99%

Magnetization reorientation inGaxMn1−xAsfilms: Planar Hall effect measurements

et al. 2010

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The process of magnetization reorientation in a ferromagnetic semiconductor GaMnAs films was investigated using planar Hall effect measurements. In addition to the well-known two-step switching behavior that occurs during this process, we have observed two additional distinct features in field scan data of the planar Hall resistance ͑PHR͒. First, the region of the external field required to begin and complete the reorientation of magnetization from one easy axis to another strongly depends on the direction of the applied field. And second, the maximum amplitude of PHR is significantly reduced during magnetization reversal when the applied field is oriented near one of the easy axes of the GaMnAs film. We provide an explanation of these phenomena using the magnetic field dependence of the free-energy density and assuming the coexistence of multiple domains with three different directions of magnetization in the sample.

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Magnetization reversal in(Ga,Mn)As∕MnOexchange-biased structures: Investigation by planar Hall effect

Cited by 33 publications

References 50 publications

Anomalous planar Hall effect in two-dimensional trigonal crystals

Anomalous planar Hall effect in two-dimensional trigonal crystals

Berry phase theory of planar Hall effect in topological insulators

Magnetization reorientation inGaxMn1−xAsfilms: Planar Hall effect measurements

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