Magnetization reversal mechanism of soft magnetic underlayer pinned by antiferromagnetic layer

Asymmetric magnetic disorder observed in thermally activated magnetization reversal of exchange-biased IrMn/CoFe films

“…Since many kinds of spin-valve structures use the exchange-biased system to pin the magnetization of F in a particular direction [2][3][4], elucidating the physical origin of exchange-bias effect is very important for realizing a reliable spintronic device. Recently, several studies on this issue have focused on the magnetization reversal mechanism of F layer and its asymmetric property between both branches of a hysteresis loop [5][6][7][8][9][10][11][12][13]. However, the underlying physics in this phenomenon is not clearly understood yet.…”

Asymmetric stochasticity of magnetization reversal dynamics in exchange-biased IrMn/CoFe Film

“…5 Recently, several studies have focused on the magnetization reversal mechanism of an exchange-biased F layer to elucidate the underlying mechanism of the exchange-bias system. [6][7][8][9][10][11][12][13][14] One of the most interesting and unsolved issues pertaining to the magnetization reversal behavior of an exchange-biased F layer is whether asymmetry exists in the stochastic nature of the domain wall (DW) dynamics between both branches of a hysteresis loop. It is generally known that DW motion in an F layer reveals stochastic behavior [15][16][17][18][19][20][21][22][23][24][25] due to randomly distributed defects that exist within samples, which generally act as DW pinning sites during the magnetization reversal process.…”

Direct observation of magnetization reversal behaviors in exchange-coupled NiO/Fe films

“…[5][6][7][8][9] Recently, several studies have focused on the change in magnetization reversal mechanism in a FM layer. [10][11][12][13] In general, the change in magnetization reversal mechanism could be explained by the increased domain wall ͑DW͒ pinning effect in a FM layer. [14][15][16] Since the DW pinning effect can be greatly affected by the t AFM , 17 it is necessary to measure magnetization reversal behavior with varying the AFM thicknesses ͑t AFM ͒ systematically to elucidate the origin of reversal mechanism change.…”