Magnetization switching induced by magnetic field and electric current in perpendicular TbIG/Pt bilayers

Abstract

Magnetic insulators (MIs) have attracted great attention because of their low Gilbert damping, long spin transmission length, and no Ohmic loss. In this study, the high quality TbIG films with perpendicular magnetic anisotropy were epitaxially grown on GGG (111) substrates. In TbIG/Pt bilayers, the angular dependence of coercivity is found to obey the Kondorsky model, suggesting the magnetization reversal mechanism of magnetic domain nucleation and expansion. The transverse component of spin Hall magnetoresistance (SMR), which is analogous to the planar Hall resistance in a ferromagnetic metal, is found to be about seven times larger than the SMR-induced anomalous Hall resistance (analogous to the anomalous Hall resistance in a ferromagnetic metal). Moreover, the phase diagrams of the current-induced magnetization switching with different angles and magnitudes of the assisting magnetic field were drawn for the TbIG/Pt bilayers. The current-induced damping-like effective field (HDL) characterized by the harmonic measurements was evaluated to be about 164 Oe/108 A cm−2. By providing a comprehensive investigation of magnetization switching behaviors in MIs, our results will promote the application of ultralow-dissipation MI based spintronic devices.

All‐Electrical Magnon Transport Experiments in Magnetically Ordered Insulators

“…[36,[40][41][42][43][44][121][122][123][124][125][126][127][128][129][130][131][132][133][134][135] In the past years, SMR is prominently used for the investigation of AFIs, which enables us to track the orientation of the Néel order parameter and detect magnetic domains in this class of materials. [124,[131][132][133][134][136][137][138][139][140][141][142][143][144][145] In addition, based on the SMR effect, it is possible to quantify spin-orbit torque effects [36,[146][147][148][149][150][151] and investigate topological spin textures in MOIs. [152][153][154][155][156]…”

Spin‐Orbit Torque and Interfacial Dzyaloshinskii–Moriya Interaction in Heavy Metal/Ferrimagnetic Insulator Deposited by Magnetron Sputtering

“…Ferrimagnetic insulators (FMIs) have attracted intensive studies for the application in spintronic devices due to their potential advantages. [ 1–23 ] Their low damping property, long spin transmission length, and absence of Ohmic loss ensure high‐speed response and low‐energy consumption in the future memory and logic devices. [ 24–26 ] Moreover, although a current cannot flow in the FMIs, their magnetization can be detected and manipulated electrically in heavy metal (HM)/FMI bilayers.…”

“…[ 1,12 ] In recent studies, the SOT‐induced magnetization switching was realized in the HM/FMI bilayers, such as Pt/Tm 3 Fe 5 O 12 (TmIG), [ 1 ] W/TmIG, [ 5 ] and Pt/Tb 3 Fe 5 O 12 . [ 18 ] Topological magnetic textures such as skyrmions in the HM/FMI bilayers were directly observed by Kerr microscope [ 11 ] and electrically detected by the topological Hall effect. [ 6,19 ] Fast motion of domain walls driven by the spin current was achieved in Pt/TmIG devices.…”

Current-Induced Magnetization Control in Insulating Ferrimagnetic Garnets

“…Following these initial demonstrations, several other works have reported SOT-induced switching in TmIG=Pt, TbIG=Pt, YIG=Pt, and Bi:YIG=Pt bilayers with similar or higher efficiencies. 57,[95][96][97][98] In particular, Vélez et al have reported local switching of magnetization in a continuous TmIG film by sending current through patterned Pt structures. 96) Local control of the magnetization in extended films is unique to magnetic insulators, and may find interest in the implementation and in-situ reconfiguration of synthetic magnetic structures for magnonic applications.…”