Magneto-ionic effect in CoFeB thin films with in-plane and perpendicular-to-plane magnetic anisotropy

Baldrati, Lorenzo; Tan, Andy; Mann, Maxwell; Bertacco, Riccardo; Beach, Geoffrey S. D.

doi:10.1063/1.4973475

Cited by 22 publications

(18 citation statements)

References 27 publications

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“…Electric field-induced oxygen motion in magnetic materials (magneto-ionics) has recently revolutionized VCM since this mechanism may allow for a voltage-driven modulation of magnetic properties, such as coercivity, exchange bias field, or magnetic anisotropy, to a level never reached by any other magnetoelectric means (i.e., approaches i-iii) above). [6,[21][22][23][24][25][26][27][28][29][30][31][32][33][34] Magneto-ionics, with magnetoelectric coupling efficiencies of the order of 10 3 fJ/(V•m), might render energies per writing event as low as ≈10 −3 fJ = 1 aJ. [22,28] This represents energies two and five orders of magnitude lower than that required in complementary metal oxide semiconductor (CMOS) technology (≈10 −1 fJ per bit) and magnetic-based devices like magnetoresistive random access memories or hard disk drives (≈10 2 fJ per bit), respectively.…”

Section: Introductionmentioning

confidence: 99%

Boosting Room‐Temperature Magneto‐Ionics in a Non‐Magnetic Oxide Semiconductor

Rojas

Quintana

Lopeandía

et al. 2020

Adv Funct Materials

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Voltage control of magnetism through electric field‐induced oxygen motion (magneto‐ionics) could represent a significant breakthrough in the pursuit for new strategies to enhance energy efficiency in magnetically actuated devices. Boosting the induced changes in magnetization, magneto‐ionic rates and cyclability continue to be key challenges to turn magneto‐ionics into real applications. Here, it is demonstrated that room‐temperature magneto‐ionic effects in electrolyte‐gated paramagnetic Co3O4 films can be largely increased both in terms of generated magnetization (6 times larger) and speed (35 times faster) if the electric field is applied using an electrochemical capacitor configuration (utilizing an underlying conducting buffer layer) instead of placing the electric contacts at the side of the semiconductor (electric‐double‐layer transistor‐like configuration). This is due to the greater uniformity and strength of the electric field in the capacitor design. These results are appealing to widen the use of ion migration in technological applications such as neuromorphic computing or iontronics in general.

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Section: Introductionmentioning

confidence: 99%

Boosting Room‐Temperature Magneto‐Ionics in a Non‐Magnetic Oxide Semiconductor

Rojas

Quintana

Lopeandía

et al. 2020

Adv Funct Materials

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“…However, in ALD-grown high-κ layers such as STO, oxygen vacancies have been shown to impact the dielectric properties (such as permittivity) of the layer [31], and can contribute to the conductivity if they are mobile [32,33]. Large modulations of the magnetic anisotropy energy have been achieved using oxygen ion migration in high-κ GdO x , with a strength up to 11.6 pJ/Vm [34][35][36]. Even though the modulation coefficient on GdO x is particularly large, the ionic effect is slow and offers poor long term stability for memory applications.…”

Section: Introductionmentioning

confidence: 99%

Electronic voltage control of magnetic anisotropy at room temperature in high- κ SrTiO3/Co/Pt trilayer

Vermeulen

Swerts

Couet

et al. 2020

Phys. Rev. Materials

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To improve power efficiency and endurance of magnetic memory technologies, a voltage-controlled mechanism is desirable. The voltage control of magnetic anisotropy (VCMA) effect in MgO stacks is a promising option, however, its strength is too low for memory applications. Replacing the standard MgO layer by an oxide with a higher permittivity κ may help improve the VCMA strength. We demonstrate a VCMA effect up to ξ = 75 fJ/Vm at room temperature in a CoࢨPt bilayer grown on atomic layer deposited (ALD) high-κ SrTiO 3 (STO). After treating the STO surface with isopropanol, a thin CoO x interfacial layer is observed, enabling VCMA. Upon cooling down from room temperature to 200 K, the VCMA effect strength increases by a factor of two. This increase is incompatible with the expected Arrhenius temperature dependence for an ionic effect and thus we argue that the observed VCMA effect is electronic. Electronic VCMA is desirable for adequate memory endurance, and hence the approach proposed here has great potential for applications.

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“…Ion motion controlled by electric fields can exhibit large effects on the magnetic properties of materials, such as magnetic anisotropy [19], exchange bias [6], and remanent magnetization [7]. A recent study by Beach and coworkers showed that the diffusion of oxygen ions at the interface of GdO x and Co suppresses and regenerates the magnetic coercivity of this heterostructure [104].…”

Section: Control Of Optical and Magnetic Propertiesmentioning

confidence: 99%

“…Such conductivity modulation can also be achieved through changes in the bandwidth due to structural modifications [18]. In addition, the magnetic properties of materials can be altered through reversible ion doping mediated by electric fields [6,7,16,19]. In Figure 1(c), we present various emerging technologies utilizing ion doping-induced functionalities.…”

mentioning

confidence: 99%

“…Representative applications employing ion doping are shown in Figure 3. By changing the electrical and optical properties of materials, iontronic processes have been employed in a wide range of applications such as chip-scale sensing in simulated oceanic environments and smart windows for thermal regulation, as well as reconfigurable circuits, non-volatile memories, and related electronic devices [4,13,19,27,28]. Iontronic systems are also relevant to several energy technologies, allowing the manipulation of electrochemical properties [5,24].…”

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confidence: 99%

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Beyond electrostatic modification: design and discovery of functional oxide phases via ionic-electronic doping

Zhang

Zhou

et al. 2018

Advances in Physics: X

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A new research field of functional materials and device physics is rising that combines ionic transport with charge carrier modulation to realize emergent physical properties and discovery of metastable phases. The paradigm for enabling function extends far beyond carrier accumulation or depletion in band semiconductors or simply moving ions through an insulating electrolyte. Rather, by carefully selecting electronically or structurally fragile materials, one can collapse or open band gaps via extreme ionic dopant concentration, or reconfigure their entire crystal structure to create new phases. Electron-electron and electron-lattice interactions can be coupled or controlled independently in such systems via electric fields without thermal constraints by use of ionic dopants. The unifying theme across these studies is to introduce ions and electrons via electric fields through interfaces, with electrochemistry playing a dominant role. In this review, we briefly summarize this nascent field of iontronics and discuss principal results to date with examples from binary and complex oxides as well as selected 2D materials systems. We conclude the review by highlighting gaps in fundamental scientific understanding and prospects for the use of such novel devices in future electronic, photonic and energy technologies.

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Magneto-ionic effect in CoFeB thin films with in-plane and perpendicular-to-plane magnetic anisotropy

Cited by 22 publications

References 27 publications

Boosting Room‐Temperature Magneto‐Ionics in a Non‐Magnetic Oxide Semiconductor

Boosting Room‐Temperature Magneto‐Ionics in a Non‐Magnetic Oxide Semiconductor

Electronic voltage control of magnetic anisotropy at room temperature in high- κ SrTiO3/Co/Pt trilayer

Beyond electrostatic modification: design and discovery of functional oxide phases via ionic-electronic doping

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