Magneto-Optic Effect in Amorphous Bi₃Fe₅O₁₂ Waveguides Sputtered at Room Temperature

Abstract

The intrasubband transition rates of bound carriers interacting with piezoelectric and polar optical phonons in a bulk GaN lattice are presented, considering the anisotropy of the uniaxial wurtzite structure. The directional dependence of the excitonic Bohr radius has a measurable effect for both types of piezoelectric and polar optical phonon scattering. In the latter case, the anisotropy of the uniaxial crystal induces exciton scattering involving both strongly mixed transverse-like and longitudinal-like polar optical phonons. By taking into account the angular frequency dispersion of the zone centre polar optical phonons, we can relate the anisotropy of the excitonic scattering rate to a particular orientation of the transverse-like phonon wave vector with respect to the c-axis. The same effect is not as pronounced in the case of the longitudinal-like polar optical phonon emission due to the much lower anisotropy of the longitudinal-like phonon frequency branch.

Magneto-optical switching devices based on Si resonators

“…We previously formed a BIG film by magnetron sputtering. 17) However, it was found that the reproducible control of its stoichiometry is not easy because BIG is composed of elements with largely different masses. Thus, we employed a metal organic decomposition (MOD) method this time.…”

“…In Table I, the performance characteristics of several types of optical switches are compared. 15,17,18) Our proposed device operates at a very low voltage less than 100 mV using a copper coil and relatively small power consumption is estimated especially for the PhC device because the volume of the PhC resonator is very small. Here, the switching energies of the PhC and Si ring resonator switches shown in Table I were calculated from the volume of the resonator and magnetization reversal energy density.…”